GaN/LiNbO3 (0001) interface formation calculated from first-principles

S. Sanna, W.G. Schmidt, Applied Surface Science 256 (2010) 5740–5743.

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Journal Article | Published | English
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Publishing Year
Journal Title
Applied Surface Science
Volume
256
Page
5740-5743
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Article Processing Charge funded by the Deutsche Forschungsgemeinschaft.
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Sanna S, Schmidt WG. GaN/LiNbO3 (0001) interface formation calculated from first-principles. Applied Surface Science. 2010;256:5740-5743. doi:10.1016/j.apsusc.2010.03.098
Sanna, S., & Schmidt, W. G. (2010). GaN/LiNbO3 (0001) interface formation calculated from first-principles. Applied Surface Science, 256, 5740–5743. https://doi.org/10.1016/j.apsusc.2010.03.098
@article{Sanna_Schmidt_2010, title={GaN/LiNbO3 (0001) interface formation calculated from first-principles}, volume={256}, DOI={10.1016/j.apsusc.2010.03.098}, journal={Applied Surface Science}, author={Sanna, Simone and Schmidt, Wolf Gero}, year={2010}, pages={5740–5743} }
Sanna, Simone, and Wolf Gero Schmidt. “GaN/LiNbO3 (0001) Interface Formation Calculated from First-Principles.” Applied Surface Science 256 (2010): 5740–43. https://doi.org/10.1016/j.apsusc.2010.03.098.
S. Sanna and W. G. Schmidt, “GaN/LiNbO3 (0001) interface formation calculated from first-principles,” Applied Surface Science, vol. 256, pp. 5740–5743, 2010.
Sanna, Simone, and Wolf Gero Schmidt. “GaN/LiNbO3 (0001) Interface Formation Calculated from First-Principles.” Applied Surface Science, vol. 256, 2010, pp. 5740–43, doi:10.1016/j.apsusc.2010.03.098.

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