First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)

W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.

Download
No fulltext has been uploaded.
Journal Article | Published | English
Author
;
Publishing Year
Journal Title
Solid State Communications
Volume
89
Issue
4
Page
345-348
ISSN
LibreCat-ID

Cite this

Schmidt WG, Srivastava G. First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications. 1994;89(4):345-348. doi:10.1016/0038-1098(94)90597-5
Schmidt, W. G., & Srivastava, G. (1994). First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications, 89(4), 345–348. https://doi.org/10.1016/0038-1098(94)90597-5
@article{Schmidt_Srivastava_1994, title={First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)}, volume={89}, DOI={10.1016/0038-1098(94)90597-5}, number={4}, journal={Solid State Communications}, author={Schmidt, Wolf Gero and Srivastava, GP}, year={1994}, pages={345–348} }
Schmidt, Wolf Gero, and GP Srivastava. “First Principles Calculations of Interface Phonons of an Epitaxial Sb Monolayer on GaAs(110) and InP(110).” Solid State Communications 89, no. 4 (1994): 345–48. https://doi.org/10.1016/0038-1098(94)90597-5.
W. G. Schmidt and G. Srivastava, “First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110),” Solid State Communications, vol. 89, no. 4, pp. 345–348, 1994.
Schmidt, Wolf Gero, and GP Srivastava. “First Principles Calculations of Interface Phonons of an Epitaxial Sb Monolayer on GaAs(110) and InP(110).” Solid State Communications, vol. 89, no. 4, 1994, pp. 345–48, doi:10.1016/0038-1098(94)90597-5.

Export

Marked Publications

Open Data LibreCat

Search this title in

Google Scholar