First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)
W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.
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Journal Article
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| English
Author
Schmidt, Wolf GeroLibreCat 
;
Srivastava, GP
;
Srivastava, GPPublishing Year
Journal Title
Solid State Communications
Volume
89
Issue
4
Page
345-348
ISSN
LibreCat-ID
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Schmidt WG, Srivastava G. First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications. 1994;89(4):345-348. doi:10.1016/0038-1098(94)90597-5
Schmidt, W. G., & Srivastava, G. (1994). First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications, 89(4), 345–348. https://doi.org/10.1016/0038-1098(94)90597-5
@article{Schmidt_Srivastava_1994, title={First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)}, volume={89}, DOI={10.1016/0038-1098(94)90597-5}, number={4}, journal={Solid State Communications}, author={Schmidt, Wolf Gero and Srivastava, GP}, year={1994}, pages={345–348} }
Schmidt, Wolf Gero, and GP Srivastava. “First Principles Calculations of Interface Phonons of an Epitaxial Sb Monolayer on GaAs(110) and InP(110).” Solid State Communications 89, no. 4 (1994): 345–48. https://doi.org/10.1016/0038-1098(94)90597-5.
W. G. Schmidt and G. Srivastava, “First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110),” Solid State Communications, vol. 89, no. 4, pp. 345–348, 1994.
Schmidt, Wolf Gero, and GP Srivastava. “First Principles Calculations of Interface Phonons of an Epitaxial Sb Monolayer on GaAs(110) and InP(110).” Solid State Communications, vol. 89, no. 4, 1994, pp. 345–48, doi:10.1016/0038-1098(94)90597-5.
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