Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations
H. Mirhosseini, J. Kiss, G. Roma, C. Felser, Thin Solid Films (2016) 143–147.
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Journal Article
| Published
| English
Author
Mirhosseini, HosseinLibreCat 
;
Kiss, Janos;
Roma, Guido;
Felser, Claudia
;
Kiss, Janos;
Roma, Guido;
Felser, ClaudiaPublishing Year
Journal Title
Thin Solid Films
Page
143-147
ISSN
LibreCat-ID
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Mirhosseini H, Kiss J, Roma G, Felser C. Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations. Thin Solid Films. 2016:143-147. doi:10.1016/j.tsf.2016.03.053
Mirhosseini, H., Kiss, J., Roma, G., & Felser, C. (2016). Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations. Thin Solid Films, 143–147. https://doi.org/10.1016/j.tsf.2016.03.053
@article{Mirhosseini_Kiss_Roma_Felser_2016, title={Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations}, DOI={10.1016/j.tsf.2016.03.053}, journal={Thin Solid Films}, author={Mirhosseini, Hossein and Kiss, Janos and Roma, Guido and Felser, Claudia}, year={2016}, pages={143–147} }
Mirhosseini, Hossein, Janos Kiss, Guido Roma, and Claudia Felser. “Reducing the Schottky Barrier Height at the MoSe2/Mo(110) Interface in Thin-Film Solar Cells: Insights from First-Principles Calculations.” Thin Solid Films, 2016, 143–47. https://doi.org/10.1016/j.tsf.2016.03.053.
H. Mirhosseini, J. Kiss, G. Roma, and C. Felser, “Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations,” Thin Solid Films, pp. 143–147, 2016.
Mirhosseini, Hossein, et al. “Reducing the Schottky Barrier Height at the MoSe2/Mo(110) Interface in Thin-Film Solar Cells: Insights from First-Principles Calculations.” Thin Solid Films, 2016, pp. 143–47, doi:10.1016/j.tsf.2016.03.053.
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