Characterization of Disorder in Semiconductors via Single-Photon Interferometry
P. Bozsoki, P. Thomas, M. Kira, W. Hoyer, T. Meier, S.W. Koch, K. Maschke, I. Varga, H. Stolz, Physical Review Letters 97 (2006).
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Journal Article
| Published
| English
Author
Bozsoki, P.;
Thomas, P.;
Kira, M.;
Hoyer, W.;
Meier, TorstenLibreCat 
;
Koch, S. W.;
Maschke, K.;
Varga, I.;
Stolz, H.
;
Koch, S. W.;
Maschke, K.;
Varga, I.;
Stolz, H.Department
Abstract
The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.
Publishing Year
Journal Title
Physical Review Letters
Volume
97
Issue
22
Article Number
227402
LibreCat-ID
Cite this
Bozsoki P, Thomas P, Kira M, et al. Characterization of Disorder in Semiconductors via Single-Photon Interferometry. Physical Review Letters. 2006;97(22). doi:10.1103/physrevlett.97.227402
Bozsoki, P., Thomas, P., Kira, M., Hoyer, W., Meier, T., Koch, S. W., Maschke, K., Varga, I., & Stolz, H. (2006). Characterization of Disorder in Semiconductors via Single-Photon Interferometry. Physical Review Letters, 97(22), Article 227402. https://doi.org/10.1103/physrevlett.97.227402
@article{Bozsoki_Thomas_Kira_Hoyer_Meier_Koch_Maschke_Varga_Stolz_2006, title={Characterization of Disorder in Semiconductors via Single-Photon Interferometry}, volume={97}, DOI={10.1103/physrevlett.97.227402}, number={22227402}, journal={Physical Review Letters}, author={Bozsoki, P. and Thomas, P. and Kira, M. and Hoyer, W. and Meier, Torsten and Koch, S. W. and Maschke, K. and Varga, I. and Stolz, H.}, year={2006} }
Bozsoki, P., P. Thomas, M. Kira, W. Hoyer, Torsten Meier, S. W. Koch, K. Maschke, I. Varga, and H. Stolz. “Characterization of Disorder in Semiconductors via Single-Photon Interferometry.” Physical Review Letters 97, no. 22 (2006). https://doi.org/10.1103/physrevlett.97.227402.
P. Bozsoki et al., “Characterization of Disorder in Semiconductors via Single-Photon Interferometry,” Physical Review Letters, vol. 97, no. 22, Art. no. 227402, 2006, doi: 10.1103/physrevlett.97.227402.
Bozsoki, P., et al. “Characterization of Disorder in Semiconductors via Single-Photon Interferometry.” Physical Review Letters, vol. 97, no. 22, 227402, 2006, doi:10.1103/physrevlett.97.227402.
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