Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
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Journal Article
| Published
| English
Author
Meier, F.;
Protte, M.;
Baron, E.;
Feneberg, M.;
Goldhahn, R.;
Reuter, DirkLibreCat;
As, Donat JosefLibreCat 
Publishing Year
Journal Title
AIP Advances
Article Number
075013
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Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances. Published online 2021. doi:10.1063/5.0053865
Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., & As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances, Article 075013. https://doi.org/10.1063/5.0053865
@article{Meier_Protte_Baron_Feneberg_Goldhahn_Reuter_As_2021, title={Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)}, DOI={10.1063/5.0053865}, number={075013}, journal={AIP Advances}, author={Meier, F. and Protte, M. and Baron, E. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}, year={2021} }
Meier, F., M. Protte, E. Baron, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” AIP Advances, 2021. https://doi.org/10.1063/5.0053865.
F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, Art. no. 075013, 2021, doi: 10.1063/5.0053865.
Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).” AIP Advances, 075013, 2021, doi:10.1063/5.0053865.
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