A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology
M. Elkhouly, Y. Mao, C. Meliani, C. Scheytt, F. Ellinger, IEEE JOURNAL OF SOLID-STATE CIRCUITS 49 (2014).
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Journal Article
| English
Author
Elkhouly, Mohamed;
Mao, Yanfei;
Meliani, Chafik;
Scheytt, ChristophLibreCat;
Ellinger, Frank
Publishing Year
Journal Title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume
49
Issue
9
LibreCat-ID
Cite this
Elkhouly M, Mao Y, Meliani C, Scheytt C, Ellinger F. A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology. IEEE JOURNAL OF SOLID-STATE CIRCUITS. 2014;49(9).
Elkhouly, M., Mao, Y., Meliani, C., Scheytt, C., & Ellinger, F. (2014). A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 49(9).
@article{Elkhouly_Mao_Meliani_Scheytt_Ellinger_2014, title={A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology}, volume={49}, number={9}, journal={IEEE JOURNAL OF SOLID-STATE CIRCUITS}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Scheytt, Christoph and Ellinger, Frank}, year={2014} }
Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Christoph Scheytt, and Frank Ellinger. “A -Band Four-Element Butler Matrix in 0.13 Μm SiGe BiCMOS Technology.” IEEE JOURNAL OF SOLID-STATE CIRCUITS 49, no. 9 (2014).
M. Elkhouly, Y. Mao, C. Meliani, C. Scheytt, and F. Ellinger, “A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 49, no. 9, 2014.
Elkhouly, Mohamed, et al. “A -Band Four-Element Butler Matrix in 0.13 Μm SiGe BiCMOS Technology.” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 49, no. 9, 2014.
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