220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology

M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions On PP (2013) 1–13.

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Abstract
This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication.
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Journal Title
Microwave Theory and Techniques, IEEE Transactions on
Volume
PP
Issue
99
Page
1-13
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Elkhouly M, Glisic S, Meliani C, Ellinger F, Scheytt C. 220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology. Microwave Theory and Techniques, IEEE Transactions on. 2013;PP(99):1-13.
Elkhouly, M., Glisic, S., Meliani, C., Ellinger, F., & Scheytt, C. (2013). 220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology. Microwave Theory and Techniques, IEEE Transactions On, PP(99), 1–13.
@article{Elkhouly_Glisic_Meliani_Ellinger_Scheytt_2013, title={220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology}, volume={PP}, number={99}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Elkhouly, Mohamed and Glisic, Srdjan and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013}, pages={1–13} }
Elkhouly, Mohamed, Srdjan Glisic, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology.” Microwave Theory and Techniques, IEEE Transactions On PP, no. 99 (2013): 1–13.
M. Elkhouly, S. Glisic, C. Meliani, F. Ellinger, and C. Scheytt, “220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology,” Microwave Theory and Techniques, IEEE Transactions on, vol. PP, no. 99, pp. 1–13, 2013.
Elkhouly, Mohamed, et al. “220–250-GHz Phased-Array Circuits in 0.13- \mu\hbox m SiGe BiCMOS Technology.” Microwave Theory and Techniques, IEEE Transactions On, vol. PP, no. 99, 2013, pp. 1–13.

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