Vertical Graphene Base Transistor
W. Mehr, J. Dabrowski, M.C. Lemme, G. Lippert, G. Lupina, M. Ostling, Y.-H. Xie, C. Scheytt, (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering 33 (2012) 691–693.
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Journal Article
| English
Author
Mehr, Wolfgang;
Dabrowski, Jarek;
Lemme, Max C.;
Lippert, Gunther;
Lupina, Grzegorz;
Ostling, Mikael;
Xie, Ya-Hong;
Scheytt, ChristophLibreCat
Abstract
We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines.
Publishing Year
Journal Title
(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering
Volume
33
Issue
5
Page
691-693
eISSN
LibreCat-ID
Cite this
Mehr W, Dabrowski J, Lemme MC, et al. Vertical Graphene Base Transistor. (Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering. 2012;33(5):691-693. doi:10.1109/LED.2012.2189193
Mehr, W., Dabrowski, J., Lemme, M. C., Lippert, G., Lupina, G., Ostling, M., Xie, Y.-H., & Scheytt, C. (2012). Vertical Graphene Base Transistor. (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering, 33(5), 691–693. https://doi.org/10.1109/LED.2012.2189193
@article{Mehr_Dabrowski_Lemme_Lippert_Lupina_Ostling_Xie_Scheytt_2012, title={Vertical Graphene Base Transistor}, volume={33}, DOI={10.1109/LED.2012.2189193}, number={5}, journal={(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering}, author={Mehr, Wolfgang and Dabrowski, Jarek and Lemme, Max C. and Lippert, Gunther and Lupina, Grzegorz and Ostling, Mikael and Xie, Ya-Hong and Scheytt, Christoph}, year={2012}, pages={691–693} }
Mehr, Wolfgang, Jarek Dabrowski, Max C. Lemme, Gunther Lippert, Grzegorz Lupina, Mikael Ostling, Ya-Hong Xie, and Christoph Scheytt. “Vertical Graphene Base Transistor.” (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering 33, no. 5 (2012): 691–93. https://doi.org/10.1109/LED.2012.2189193.
W. Mehr et al., “Vertical Graphene Base Transistor,” (Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering, vol. 33, no. 5, pp. 691–693, 2012, doi: 10.1109/LED.2012.2189193.
Mehr, Wolfgang, et al. “Vertical Graphene Base Transistor.” (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering, vol. 33, no. 5, 2012, pp. 691–93, doi:10.1109/LED.2012.2189193.
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