A 245 GHz CB LNA and SHM mixer in SiGe technology
Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, in: SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems), 2012, pp. 5–8.
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Conference Paper
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Author
Mao, Yanfei;
Schmalz, Klaus;
Borngräber, Johannes;
Scheytt, ChristophLibreCat
Abstract
The paper presents a four stage 245 GHz LNA in an f t /f max =280/425 GHz SiGe technology and a 4 th sub harmonic 245 GHz transconductance mixer in an f t /f max =250/300 GHz SiGe technology. The LNA takes advantage of common base (CB) topology for each stage and has 12 dB gain at 245 GHz, while exhibiting a 3 dB bandwidth of 26 GHz. It has a supply voltage of 2V and power dissipation of 28 mW. The transconductance mixer has -7 dB conversion gain at 245 GHz with an LO power of 8 dBm at 61 GHz. The mixer draws 9.8 mA at 3V. Simulation results of the receiver comprising the CB LNA and SHM mixer are given.
Publishing Year
Proceedings Title
SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)
Page
5-8
Conference Date
16.01.2012 – 18.01.2012
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Cite this
Mao Y, Schmalz K, Borngräber J, Scheytt C. A 245 GHz CB LNA and SHM mixer in SiGe technology. In: SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems). ; 2012:5-8. doi:10.1109/SiRF.2012.6160120
Mao, Y., Schmalz, K., Borngräber, J., & Scheytt, C. (2012). A 245 GHz CB LNA and SHM mixer in SiGe technology. SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems), 5–8. https://doi.org/10.1109/SiRF.2012.6160120
@inproceedings{Mao_Schmalz_Borngräber_Scheytt_2012, title={A 245 GHz CB LNA and SHM mixer in SiGe technology}, DOI={10.1109/SiRF.2012.6160120}, booktitle={SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph}, year={2012}, pages={5–8} }
Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt. “A 245 GHz CB LNA and SHM Mixer in SiGe Technology.” In SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems), 5–8, 2012. https://doi.org/10.1109/SiRF.2012.6160120.
Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “A 245 GHz CB LNA and SHM mixer in SiGe technology,” in SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems), 2012, pp. 5–8, doi: 10.1109/SiRF.2012.6160120.
Mao, Yanfei, et al. “A 245 GHz CB LNA and SHM Mixer in SiGe Technology.” SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems), 2012, pp. 5–8, doi:10.1109/SiRF.2012.6160120.
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