Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents
M. Iftekhar, S. Gudyriev, J.C. Scheytt, in: The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021.
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Iftekhar, MohammedLibreCat;
Gudyriev, Sergiy;
Scheytt, J. ChristophLibreCat
Abstract
This paper presents a technique to extend the frequency acquisition range for bang-bang phase-detector-based clock and data recovery (CDR) circuits without an additional frequency acquisition loop or lock detection circuit. The per-manent modulation of the offset current in the CDR's integral branch enhances the acquisition range by nearly 4 times, covering the entire tuning range of the voltage controlled oscillator. The increase in power dissipation and the chip area are negligible. This technique was implemented and measured in a 28 Gbps NRZ bang-bang CDR chip to confirm the working principle. In addition to the increased acquisition range, the CDR also surpasses jitter related specifications from the OIF CEI-28G-VSR standard.
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The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium
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Iftekhar M, Gudyriev S, Scheytt JC. Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents. In: The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium. ; 2021. doi:10.1109/BCICTS50416.2021.9682207
Iftekhar, M., Gudyriev, S., & Scheytt, J. C. (2021). Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents. The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium. https://doi.org/10.1109/BCICTS50416.2021.9682207
@inproceedings{Iftekhar_Gudyriev_Scheytt_2021, title={Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents}, DOI={10.1109/BCICTS50416.2021.9682207}, booktitle={The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium}, author={Iftekhar, Mohammed and Gudyriev, Sergiy and Scheytt, J. Christoph}, year={2021} }
Iftekhar, Mohammed, Sergiy Gudyriev, and J. Christoph Scheytt. “Reference-Less Bang-Bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents.” In The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021. https://doi.org/10.1109/BCICTS50416.2021.9682207.
M. Iftekhar, S. Gudyriev, and J. C. Scheytt, “Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents,” 2021, doi: 10.1109/BCICTS50416.2021.9682207.
Iftekhar, Mohammed, et al. “Reference-Less Bang-Bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset Currents.” The 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021, doi:10.1109/BCICTS50416.2021.9682207.
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