InAs heteroepitaxy on GaAs patterned by nanosphere lithography
V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, J. Lindner, in: 2017.
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Conference Paper
Author
Kunnathully, Vinay;
Riedl, ThomasLibreCat;
Karlisch, A.;
Reuter, DirkLibreCat;
Lindner, JörgLibreCat
Department
Publishing Year
Conference
E-MRS Fall Meeting 2017
Conference Location
Warsaw (Poland)
Conference Date
2017-09-18 – 2017-09-21
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Kunnathully V, Riedl T, Karlisch A, Reuter D, Lindner J. InAs heteroepitaxy on GaAs patterned by nanosphere lithography. In: ; 2017.
Kunnathully, V., Riedl, T., Karlisch, A., Reuter, D., & Lindner, J. (2017). InAs heteroepitaxy on GaAs patterned by nanosphere lithography. Presented at the E-MRS Fall Meeting 2017, Warsaw (Poland).
@inproceedings{Kunnathully_Riedl_Karlisch_Reuter_Lindner_2017, title={InAs heteroepitaxy on GaAs patterned by nanosphere lithography}, author={Kunnathully, Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}, year={2017} }
Kunnathully, Vinay, Thomas Riedl, A. Karlisch, Dirk Reuter, and Jörg Lindner. “InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography,” 2017.
V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, and J. Lindner, “InAs heteroepitaxy on GaAs patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaw (Poland), 2017.
Kunnathully, Vinay, et al. InAs Heteroepitaxy on GaAs Patterned by Nanosphere Lithography. 2017.
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