Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography
T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, J. Lindner, in: 2017.
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Author
Riedl, ThomasLibreCat;
Kunnathully, Vinay ;
Karlisch, A.;
Reuter, DirkLibreCat;
Lindner, JörgLibreCat
Department
Publishing Year
Conference
E-MRS Fall Meeting 2017
Conference Location
Warsaq (Poland)
Conference Date
2017-09-18 – 2017-09-21
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Riedl T, Kunnathully V, Karlisch A, Reuter D, Lindner J. Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography. In: ; 2017.
Riedl, T., Kunnathully, V., Karlisch, A., Reuter, D., & Lindner, J. (2017). Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography. Presented at the E-MRS Fall Meeting 2017, Warsaq (Poland).
@inproceedings{Riedl_Kunnathully_Karlisch_Reuter_Lindner_2017, title={Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography}, author={Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}, year={2017} }
Riedl, Thomas, Vinay Kunnathully, A. Karlisch, Dirk Reuter, and Jörg Lindner. “Group III Arsenide Heteroepitaxy on Si(111) Using SiNx Nanohole Masks Patterned by Nanosphere Lithography,” 2017.
T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, and J. Lindner, “Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaq (Poland), 2017.
Riedl, Thomas, et al. Group III Arsenide Heteroepitaxy on Si(111) Using SiNx Nanohole Masks Patterned by Nanosphere Lithography. 2017.
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