Matching analysis of deposition defined 50-nm MOSFET's
J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.
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Journal Article
| Published
| English
Author
Horstmann, J.T.;
Hilleringmann, UlrichLibreCat;
Goser, K.F.
Department
Publishing Year
Journal Title
IEEE Transactions on Electron Devices
Volume
45
Issue
1
Page
299-306
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LibreCat-ID
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Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices. 2002;45(1):299-306. doi:10.1109/16.658845
Horstmann, J. T., Hilleringmann, U., & Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. IEEE Transactions on Electron Devices, 45(1), 299–306. https://doi.org/10.1109/16.658845
@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={10.1109/16.658845}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }
Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” IEEE Transactions on Electron Devices 45, no. 1 (2002): 299–306. https://doi.org/10.1109/16.658845.
J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 299–306, 2002, doi: 10.1109/16.658845.
Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” IEEE Transactions on Electron Devices, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:10.1109/16.658845.
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