CMOS compatible micromachining by dry silicon-etching techniques
S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.
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Journal Article
| Published
| English
Author
Adams, S.;
Hilleringmann, UlrichLibreCat;
Goser, K.
Department
Keywords
Publishing Year
Journal Title
Microelectronic Engineering
Volume
19
Issue
1-4
Page
191-194
ISSN
LibreCat-ID
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Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering. 2002;19(1-4):191-194. doi:10.1016/0167-9317(92)90420-v
Adams, S., Hilleringmann, U., & Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. Microelectronic Engineering, 19(1–4), 191–194. https://doi.org/10.1016/0167-9317(92)90420-v
@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={10.1016/0167-9317(92)90420-v}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }
Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” Microelectronic Engineering 19, no. 1–4 (2002): 191–94. https://doi.org/10.1016/0167-9317(92)90420-v.
S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” Microelectronic Engineering, vol. 19, no. 1–4, pp. 191–194, 2002, doi: 10.1016/0167-9317(92)90420-v.
Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” Microelectronic Engineering, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:10.1016/0167-9317(92)90420-v.
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