Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal Growth 378 (2012) 291–294.
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Growth of cubic GaN on 3C-SiC-Si 001 nanostructures.pdf
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Journal Article
| Published
| English
Author
Kemper, R.M.;
Hiller, L.;
Stauden, T.;
Pezoldt, J.;
Duschik, K.;
Niendorf, T.;
Maier, H.J.;
Meertens, D.;
Tillmann, K.;
As, D.J.;
Lindner, JörgLibreCat
Department
Abstract
We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar defects. The nanostructures, aligned parallel and perpendicular to the [110] directions of the substrate, are located in anti-phase domains of the 3C–SiC/Si (001) substrate. These anti-phase domains strongly influence the optimum growth of GaN layers in these regions. TEM measurements demonstrate a different stacking fault density in the cubic GaN epilayer in these areas.
Publishing Year
Journal Title
Journal of Crystal Growth
Volume
378
Page
291-294
Conference
17th Int. Conference on MBE 2012
Conference Location
Nara (Japan)
ISSN
LibreCat-ID
Cite this
Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth. 2012;378:291-294. doi:10.1016/j.jcrysgro.2012.10.011
Kemper, R. M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf, T., … Lindner, J. (2012). Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth, 378, 291–294. https://doi.org/10.1016/j.jcrysgro.2012.10.011
@article{Kemper_Hiller_Stauden_Pezoldt_Duschik_Niendorf_Maier_Meertens_Tillmann_As_et al._2012, title={Growth of cubic GaN on 3C–SiC/Si (001) nanostructures}, volume={378}, DOI={10.1016/j.jcrysgro.2012.10.011}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Hiller, L. and Stauden, T. and Pezoldt, J. and Duschik, K. and Niendorf, T. and Maier, H.J. and Meertens, D. and Tillmann, K. and As, D.J. and et al.}, year={2012}, pages={291–294} }
Kemper, R.M., L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” Journal of Crystal Growth 378 (2012): 291–94. https://doi.org/10.1016/j.jcrysgro.2012.10.011.
R. M. Kemper et al., “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,” Journal of Crystal Growth, vol. 378, pp. 291–294, 2012.
Kemper, R. M., et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” Journal of Crystal Growth, vol. 378, Elsevier BV, 2012, pp. 291–94, doi:10.1016/j.jcrysgro.2012.10.011.
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