ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures

L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 717–720 (2012) 901–904.

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Journal Article | Published | English
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Abstract
Anisotropic etching processes for mesa structure formation using fluorinated plasma atmospheres in an electron cyclotron resonance (ECR) plasma etcher were studied on Novasic substrates with 10 μm thick 3C-SiC(100) grown on Si(100). To achieve reasonable etching rates, a special gas inlet system suitable for injecting SF6 into the high density downstream Ar ECR plasma was designed. The influence of the etching mask material on the sidewall morphology was investigated. Masking materials with small grain sizes are preferable to achieve a desired shape. The evolution of the mesa form was investigated in dependence on the gas composition, the applied bias, the pressure and the composition of the gas atmosphere. The achieved sidewall slope was 84.5 deg. The aspect ratios of the fabricated structures in the developed residue free ECR plasma etching process were between 5 and 10. Mesa structures aligned to [100] and [110] directions were fabricated.
Publishing Year
Journal Title
Materials Science Forum
Volume
717-720
Page
901-904
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2011
Conference Location
Cleveland (USA)
ISSN
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Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. Materials Science Forum. 2012;717-720:901-904. doi:10.4028/www.scientific.net/msf.717-720.901
Hiller, L., Stauden, T., Kemper, R. M., Lindner, J., As, D. J., & Pezoldt, J. (2012). ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. Materials Science Forum, 717720, 901–904. https://doi.org/10.4028/www.scientific.net/msf.717-720.901
@article{Hiller_Stauden_Kemper_Lindner_As_Pezoldt_2012, title={ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures}, volume={717–720}, DOI={10.4028/www.scientific.net/msf.717-720.901}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Hiller, Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat J. and Pezoldt, Jörg}, year={2012}, pages={901–904} }
Hiller, Lars, Thomas Stauden, Ricarda M. Kemper, Jörg Lindner, Donat J. As, and Jörg Pezoldt. “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.” Materials Science Forum 717–720 (2012): 901–4. https://doi.org/10.4028/www.scientific.net/msf.717-720.901.
L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt, “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures,” Materials Science Forum, vol. 717–720, pp. 901–904, 2012.
Hiller, Lars, et al. “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.” Materials Science Forum, vol. 717–720, Trans Tech Publications, 2012, pp. 901–04, doi:10.4028/www.scientific.net/msf.717-720.901.
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