Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
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Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf
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Journal Article
| Published
| English
Author
Kemper, R.M.;
Weinl, M.;
Mietze, C.;
Häberlen, M.;
Schupp, T.;
Tschumak, E.;
Lindner, JörgLibreCat;
Lischka, K.;
As, Donald
Abstract
Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si
(0 0 1)substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process andt hus isa potential alternative to the conventional top–down fabrication techniques.
Publishing Year
Journal Title
Journal of Crystal Growth
Volume
323
Issue
1
Page
84-87
ISSN
LibreCat-ID
Cite this
Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth. 2010;323(1):84-87. doi:10.1016/j.jcrysgro.2010.12.042
Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., … As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth, 323(1), 84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042
@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010, title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323}, DOI={10.1016/j.jcrysgro.2010.12.042}, number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87} }
Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, Jörg Lindner, K. Lischka, and Donald As. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” Journal of Crystal Growth 323, no. 1 (2010): 84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042.
R. M. Kemper et al., “Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” Journal of Crystal Growth, vol. 323, no. 1, pp. 84–87, 2010.
Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010, pp. 84–87, doi:10.1016/j.jcrysgro.2010.12.042.
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