Type I-type II transition in InGaAs–GaNAs heterostructures
C. Schlichenmaier, H. Grüning, A. Thränhardt, P.J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S.W. Koch, Applied Physics Letters 86 (2005).
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Journal Article
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Author
Schlichenmaier, C.;
Grüning, H.;
Thränhardt, A.;
Klar, P.J.;
Kunert, B.;
Volz, K.;
Stolz, W.;
Heimbrodt, W.;
Meier, TorstenLibreCat 
;
Koch, S.W.
;
Koch, S.W.Department
Abstract
Optical interband transitions in a series of In0.23Ga0.77As–GaN𝑥As1−𝑥 quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5)eV is extracted for this heterostructure system.This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), by AFOSR (F49620-02-1-0380) and the Max-Planck Research Prize of the Max-Planck Society and Humboldt Foundation. We thank Stanko Tomić (Daresbury Laboratory) for fruitful discussions.
Publishing Year
Journal Title
Applied Physics Letters
Volume
86
Issue
8
Article Number
081903
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Cite this
Schlichenmaier C, Grüning H, Thränhardt A, et al. Type I-type II transition in InGaAs–GaNAs heterostructures. Applied Physics Letters. 2005;86(8). doi:American Institute of Physics
Schlichenmaier, C., Grüning, H., Thränhardt, A., Klar, P. J., Kunert, B., Volz, K., Stolz, W., Heimbrodt, W., Meier, T., & Koch, S. W. (2005). Type I-type II transition in InGaAs–GaNAs heterostructures. Applied Physics Letters, 86(8), Article 081903. https://doi.org/American Institute of Physics
@article{Schlichenmaier_Grüning_Thränhardt_Klar_Kunert_Volz_Stolz_Heimbrodt_Meier_Koch_2005, title={Type I-type II transition in InGaAs–GaNAs heterostructures}, volume={86}, DOI={American Institute of Physics}, number={8081903}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Schlichenmaier, C. and Grüning, H. and Thränhardt, A. and Klar, P.J. and Kunert, B. and Volz, K. and Stolz, W. and Heimbrodt, W. and Meier, Torsten and Koch, S.W.}, year={2005} }
Schlichenmaier, C., H. Grüning, A. Thränhardt, P.J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, Torsten Meier, and S.W. Koch. “Type I-Type II Transition in InGaAs–GaNAs Heterostructures.” Applied Physics Letters 86, no. 8 (2005). https://doi.org/American Institute of Physics.
C. Schlichenmaier et al., “Type I-type II transition in InGaAs–GaNAs heterostructures,” Applied Physics Letters, vol. 86, no. 8, Art. no. 081903, 2005, doi: American Institute of Physics.
Schlichenmaier, C., et al. “Type I-Type II Transition in InGaAs–GaNAs Heterostructures.” Applied Physics Letters, vol. 86, no. 8, 081903, American Institute of Physics, 2005, doi:American Institute of Physics.
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