Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range
T. Meier, C. Schlichenmaier, A. Thränhardt, H. Grüning, P.J. Klar, W. Heimbrodt, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, in: Quantum Electronics and Laser Science Conference, Optical Society of America, 2005.
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Conference Paper
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Author
Meier, TorstenLibreCat 
;
Schlichenmaier, C.;
Thränhardt, A.;
Grüning, H.;
Klar, Peter J.;
Heimbrodt, Wolfram;
Koch, S.W.;
Chow, Weng W.;
Hader, J.;
Moloney, Jerome V.
;
Schlichenmaier, C.;
Thränhardt, A.;
Grüning, H.;
Klar, Peter J.;
Heimbrodt, Wolfram;
Koch, S.W.;
Chow, Weng W.;
Hader, J.;
Moloney, Jerome V.Department
Abstract
Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1−x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.
Publishing Year
Proceedings Title
Quantum Electronics and Laser Science Conference
Article Number
JTuC92
Conference
Quantum Electronics and Laser Science Conference 2005
Conference Location
Baltimore, Maryland United States
Conference Date
2005-05-22 – 2005-05-27
ISBN
LibreCat-ID
Cite this
Meier T, Schlichenmaier C, Thränhardt A, et al. Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range. In: Quantum Electronics and Laser Science Conference. Optical Society of America; 2005.
Meier, T., Schlichenmaier, C., Thränhardt, A., Grüning, H., Klar, P. J., Heimbrodt, W., Koch, S. W., Chow, W. W., Hader, J., & Moloney, J. V. (2005). Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range. Quantum Electronics and Laser Science Conference, Article JTuC92. Quantum Electronics and Laser Science Conference 2005, Baltimore, Maryland United States.
@inproceedings{Meier_Schlichenmaier_Thränhardt_Grüning_Klar_Heimbrodt_Koch_Chow_Hader_Moloney_2005, title={Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range}, number={JTuC92}, booktitle={ Quantum Electronics and Laser Science Conference}, publisher={Optical Society of America}, author={Meier, Torsten and Schlichenmaier, C. and Thränhardt, A. and Grüning, H. and Klar, Peter J. and Heimbrodt, Wolfram and Koch, S.W. and Chow, Weng W. and Hader, J. and Moloney, Jerome V.}, year={2005} }
Meier, Torsten, C. Schlichenmaier, A. Thränhardt, H. Grüning, Peter J. Klar, Wolfram Heimbrodt, S.W. Koch, Weng W. Chow, J. Hader, and Jerome V. Moloney. “Analysis of Dilute Nitride Semiconductor Laser Gain Materials in the 1.3-1.5/Spl Mu/m Range.” In Quantum Electronics and Laser Science Conference. Optical Society of America, 2005.
T. Meier et al., “Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range,” presented at the Quantum Electronics and Laser Science Conference 2005, Baltimore, Maryland United States, 2005.
Meier, Torsten, et al. “Analysis of Dilute Nitride Semiconductor Laser Gain Materials in the 1.3-1.5/Spl Mu/m Range.” Quantum Electronics and Laser Science Conference, JTuC92, Optical Society of America, 2005.
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