Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
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Journal Article
| Published
| English
Author
Schuster, J;
Kim, T Y;
Batke, E;
Reuter, DirkLibreCat;
Wieck, A D
Publishing Year
Journal Title
Semiconductor Science and Technology
Volume
33
Issue
9
Article Number
095020
LibreCat-ID
Cite this
Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology. 2018;33(9). doi:10.1088/1361-6641/aad83d
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2018). Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology, 33(9). https://doi.org/10.1088/1361-6641/aad83d
@article{Schuster_Kim_Batke_Reuter_Wieck_2018, title={Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures}, volume={33}, DOI={10.1088/1361-6641/aad83d}, number={9095020}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2018} }
Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Interlayer Charge Transfer in N-Modulation Doped Al1−x Ga x As–GaAs Single Heterostructures.” Semiconductor Science and Technology 33, no. 9 (2018). https://doi.org/10.1088/1361-6641/aad83d.
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures,” Semiconductor Science and Technology, vol. 33, no. 9, 2018.
Schuster, J., et al. “Interlayer Charge Transfer in N-Modulation Doped Al1−x Ga x As–GaAs Single Heterostructures.” Semiconductor Science and Technology, vol. 33, no. 9, 095020, IOP Publishing, 2018, doi:10.1088/1361-6641/aad83d.
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