Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy

T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Japanese Journal of Applied Physics 55 (2016).

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Journal Article | Published | English
Author
Wecker, Tobias; Callsen, Gordon; Hoffmann, Axel; Reuter, DirkLibreCat; As, Donat JosefLibreCat
Publishing Year
Journal Title
Japanese Journal of Applied Physics
Volume
55
Issue
5S
Article Number
05FG01
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Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy. Japanese Journal of Applied Physics. 2016;55(5S). doi:10.7567/jjap.55.05fg01
Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., & As, D. J. (2016). Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy. Japanese Journal of Applied Physics, 55(5S). https://doi.org/10.7567/jjap.55.05fg01
@article{Wecker_Callsen_Hoffmann_Reuter_As_2016, title={Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy}, volume={55}, DOI={10.7567/jjap.55.05fg01}, number={5S05FG01}, journal={Japanese Journal of Applied Physics}, publisher={Japan Society of Applied Physics}, author={Wecker, Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef}, year={2016} }
Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef As. “Photoluminescence Excitation Spectroscopy of Excited States of an Asymmetric Cubic GaN/Al0.25Ga0.75N Double Quantum Well Grown by Molecular Beam Epitaxy.” Japanese Journal of Applied Physics 55, no. 5S (2016). https://doi.org/10.7567/jjap.55.05fg01.
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy,” Japanese Journal of Applied Physics, vol. 55, no. 5S, 2016.
Wecker, Tobias, et al. “Photoluminescence Excitation Spectroscopy of Excited States of an Asymmetric Cubic GaN/Al0.25Ga0.75N Double Quantum Well Grown by Molecular Beam Epitaxy.” Japanese Journal of Applied Physics, vol. 55, no. 5S, 05FG01, Japan Society of Applied Physics, 2016, doi:10.7567/jjap.55.05fg01.

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