Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures

J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).

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Journal Article | Published | English
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Journal Title
Semiconductor Science and Technology
Volume
28
Issue
8
Article Number
085012
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Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology. 2013;28(8). doi:10.1088/0268-1242/28/8/085012
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2013). Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology, 28(8). https://doi.org/10.1088/0268-1242/28/8/085012
@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures}, volume={28}, DOI={10.1088/0268-1242/28/8/085012}, number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2013} }
Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and Technology 28, no. 8 (2013). https://doi.org/10.1088/0268-1242/28/8/085012.
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 8, 2013.
Schuster, J., et al. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and Technology, vol. 28, no. 8, 085012, IOP Publishing, 2013, doi:10.1088/0268-1242/28/8/085012.

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