Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped Al[sub x]Ga[sub 1−x]As

D. Reuter, C. Riedesel, A.D. Wieck, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (2006).

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Journal Article | Published | English
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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1863
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Reuter D, Riedesel C, Wieck AD. Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped Al[sub x]Ga[sub 1−x]As. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 2006. doi:10.1116/1.2217975
Reuter, D., Riedesel, C., & Wieck, A. D. (2006). Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped Al[sub x]Ga[sub 1−x]As. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. https://doi.org/10.1116/1.2217975
@article{Reuter_Riedesel_Wieck_2006, title={Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped Al[sub x]Ga[sub 1−x]As}, DOI={10.1116/1.2217975}, number={1863}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures}, author={Reuter, Dirk and Riedesel, C. and Wieck, A. D.}, year={2006} }
Reuter, Dirk, C. Riedesel, and A. D. Wieck. “Fabrication of Submicrometer Patterned Two-Dimensional Electron Gases by Overgrowth of Focused Ion Beam Doped Al[Sub x]Ga[Sub 1−x]As.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2006. https://doi.org/10.1116/1.2217975.
D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped Al[sub x]Ga[sub 1−x]As,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2006.
Reuter, Dirk, et al. “Fabrication of Submicrometer Patterned Two-Dimensional Electron Gases by Overgrowth of Focused Ion Beam Doped Al[Sub x]Ga[Sub 1−x]As.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1863, 2006, doi:10.1116/1.2217975.

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