Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation

D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.

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Journal Article | Published | English
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Semiconductor Science and Technology
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140-143
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Kähler D, Knop M, Kunze U, Reuter D, Wieck AD. Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology. 2004:140-143. doi:10.1088/0268-1242/20/2/006
Kähler, D., Knop, M., Kunze, U., Reuter, D., & Wieck, A. D. (2004). Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology, 140–143. https://doi.org/10.1088/0268-1242/20/2/006
@article{Kähler_Knop_Kunze_Reuter_Wieck_2004, title={Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation}, DOI={10.1088/0268-1242/20/2/006}, journal={Semiconductor Science and Technology}, author={Kähler, D and Knop, M and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2004}, pages={140–143} }
Kähler, D, M Knop, U Kunze, Dirk Reuter, and A D Wieck. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.” Semiconductor Science and Technology, 2004, 140–43. https://doi.org/10.1088/0268-1242/20/2/006.
D. Kähler, M. Knop, U. Kunze, D. Reuter, and A. D. Wieck, “Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation,” Semiconductor Science and Technology, pp. 140–143, 2004.
Kähler, D., et al. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.” Semiconductor Science and Technology, 2004, pp. 140–43, doi:10.1088/0268-1242/20/2/006.

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