Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope

G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739.

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Journal Article | Published | English
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Apetrii, G; Fischer, S F; Kunze, U; Reuter, DirkLibreCat; Wieck, A D
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Semiconductor Science and Technology
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735-739
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Apetrii G, Fischer SF, Kunze U, Reuter D, Wieck AD. Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology. 2003:735-739. doi:10.1088/0268-1242/17/7/317
Apetrii, G., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2003). Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology, 735–739. https://doi.org/10.1088/0268-1242/17/7/317
@article{Apetrii_Fischer_Kunze_Reuter_Wieck_2003, title={Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope}, DOI={10.1088/0268-1242/17/7/317}, journal={Semiconductor Science and Technology}, author={Apetrii, G and Fischer, S F and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2003}, pages={735–739} }
Apetrii, G, S F Fischer, U Kunze, Dirk Reuter, and A D Wieck. “Influence of Processing Parameters on the Transport Properties of Quantum Point Contacts Fabricated with an Atomic Force Microscope.” Semiconductor Science and Technology, 2003, 735–39. https://doi.org/10.1088/0268-1242/17/7/317.
G. Apetrii, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope,” Semiconductor Science and Technology, pp. 735–739, 2003.
Apetrii, G., et al. “Influence of Processing Parameters on the Transport Properties of Quantum Point Contacts Fabricated with an Atomic Force Microscope.” Semiconductor Science and Technology, 2003, pp. 735–39, doi:10.1088/0268-1242/17/7/317.

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