Please note that LibreCat no longer supports Internet Explorer versions 8 or 9 (or earlier).

We recommend upgrading to the latest Internet Explorer, Google Chrome, or Firefox.

2139 Publications


2010 | Journal Article | LibreCat-ID: 4202
T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol. 107, no. 2, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4204
F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” Physical Review B, vol. 82, no. 9, 2010.
LibreCat | Files available | DOI
 

2010 | Conference Abstract | LibreCat-ID: 4206
J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy, Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain), 2010.
LibreCat
 

2010 | Book (Editor) | LibreCat-ID: 4207
D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., Ion Beams and Nano-Engineering, vol. 1181. MRS Symposium Proceedings , 2010.
LibreCat
 

2010 | Journal Article | LibreCat-ID: 4208
M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” Journal of Physics: Conference Series, vol. 209, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4210
M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” physica status solidi (b), vol. 247, no. 7, pp. 1753–1756, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4212
M. Häberlen et al., “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” Journal of Applied Physics, vol. 108, no. 3, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4214
R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 4216
A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” Materials Science Forum, vol. 645–648, pp. 403–406, 2010.
LibreCat | Files available | DOI
 

2010 | Journal Article | LibreCat-ID: 6619
H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*,” Chemie Ingenieur Technik, vol. 82, no. 3, pp. 251–258, 2010.
LibreCat | DOI
 

Filters and Search Terms

department=15

Search

Filter Publications

Display / Sort

Citation Style: IEEE

Export / Embed