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1118 Publications


1996 | Journal Article | LibreCat-ID: 13783
Geometry and electronic structure of GaAs(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Physical Review B 54 (1996) 16742–16748.
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1996 | Journal Article | LibreCat-ID: 13788
Annihilation of delocalized positrons: a comparison of diamond and silicon
W.G. Schmidt, W.. Verwoerd, Physics Letters A 222 (1996) 275–280.
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1996 | Journal Article | LibreCat-ID: 13790
3d core-level shifts at
W.G. Schmidt, P. Käckell, F. Bechstedt, Surface Science 357–358 (1996) 545–549.
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1995 | Journal Article | LibreCat-ID: 13796
Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385.
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1995 | Journal Article | LibreCat-ID: 13797
Optical properties of Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167.
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1995 | Journal Article | LibreCat-ID: 13800
Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 1152–1156.
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1995 | Journal Article | LibreCat-ID: 13850
Geometrical and electronic structure of the reconstructed diamond (100) surface
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700.
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1995 | Journal Article | LibreCat-ID: 13798
III-V(110) surface dynamics from anab initiofrozen-phonon approach
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007.
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1995 | Journal Article | LibreCat-ID: 13801
III-V(110)/Sb(1 ML): structural and dynamical properties
W.G. Schmidt, G.P. Srivastava, Surface Science 331–333 (1995) 540–545.
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1995 | Journal Article | LibreCat-ID: 13851
Exchange reactions versus adsorption geometries for Se/GaAs(110)
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.
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1995 | Journal Article | LibreCat-ID: 13799
Se/GaAs(110): energetics and structure
W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 557–563.
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1995 | Journal Article | LibreCat-ID: 13852
Se/GaAs(110): Atomic and electronic structure
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.
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1994 | Journal Article | LibreCat-ID: 13854
First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)
W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.
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1994 | Journal Article | LibreCat-ID: 13855
Coverage-dependent bonding of Sb on GaAs (110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Surface Science 307–309 (1994) 235–240.
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1994 | Journal Article | LibreCat-ID: 13856
Chemisorption of antimony on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Physical Review B 49 (1994) 4731–4744.
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1994 | Journal Article | LibreCat-ID: 13853
Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations
F. Bechstedt, W.G. Schmidt, B. Wenzien, Europhysics Letters (EPL) 25 (1994) 357–362.
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1993 | Journal Article | LibreCat-ID: 13857
Chemisorption of aluminium on GaAs(110)
W.G. Schmidt, G.P. Srivastava, Journal of Physics: Condensed Matter 5 (1993) 9025–9036.
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1993 | Journal Article | LibreCat-ID: 13858
AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Czechoslovak Journal of Physics 43 (1993) 1003–1007.
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