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1023 Publications


2013 | Journal Article | LibreCat-ID: 7263
G. Moody et al., “Biexcitons in semiconductor quantum dot ensembles,” physica status solidi (b), vol. 250, no. 9, pp. 1753–1759, 2013.
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2013 | Journal Article | LibreCat-ID: 7264
M. Wortmann, A. Ludwig, J. Meijer, D. Reuter, and A. D. Wieck, “High-resolution mass spectrometer for liquid metal ion sources,” Review of Scientific Instruments, vol. 84, no. 9, 2013.
LibreCat | DOI
 

2013 | Journal Article | LibreCat-ID: 7266
A. V. Kuhlmann et al., “Charge noise and spin noise in a semiconductor quantum device,” Nature Physics, vol. 9, no. 9, pp. 570–575, 2013.
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2013 | Journal Article | LibreCat-ID: 7267
A. V. Kuhlmann et al., “A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode,” Review of Scientific Instruments, vol. 84, no. 7, 2013.
LibreCat | DOI
 

2013 | Conference Paper | LibreCat-ID: 7280
H. Höpfner et al., “Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects,” in Spintronics VI, 2013.
LibreCat | DOI
 

2013 | Journal Article | LibreCat-ID: 7281
H. Höpfner et al., “Spin relaxation length in quantum dot spin LEDs,” physica status solidi (c), vol. 10, no. 9, pp. 1214–1217, 2013.
LibreCat | DOI
 

2013 | Journal Article | LibreCat-ID: 7282
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 8, 2013.
LibreCat | DOI
 

2013 | Journal Article | LibreCat-ID: 7284
M. S. Kuznetsova et al., “Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations,” Physical Review B, vol. 87, no. 23, 2013.
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2013 | Journal Article | LibreCat-ID: 7285
Y. Komijani et al., “Origins of conductance anomalies in ap-type GaAs quantum point contact,” Physical Review B, vol. 87, no. 24, 2013.
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2013 | Journal Article | LibreCat-ID: 7286
G. Bussone et al., “Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams,” Journal of Applied Crystallography, vol. 46, no. 4, pp. 887–892, 2013.
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