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7 Publications
2020 | Journal Article | LibreCat-ID: 34090
Riedl T, Lindner J. Applicability of molecular statics simulation to partial dislocations in GaAs. Solid State Communications. 2020;314-315. doi:10.1016/j.ssc.2020.113927
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 34089
Riedl T, Lindner J. Applicability of molecular statics simulation to partial dislocations in GaAs. Solid State Communications. 2020;314-315. doi:10.1016/j.ssc.2020.113927
LibreCat
| DOI
2013 | Journal Article | LibreCat-ID: 7296
Moody G, Singh R, Li H, et al. Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy. Solid State Communications. 2013;163:65-69. doi:10.1016/j.ssc.2013.03.025
LibreCat
| DOI
2008 | Journal Article | LibreCat-ID: 40411
Pasenow B, Duc HT, Meier T, Koch SW. Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells. Solid State Communications. 2008;145(1-2):61-65. doi:10.1016/j.ssc.2007.09.029
LibreCat
| DOI
2008 | Journal Article | LibreCat-ID: 24976
Pasenow B, Duc HT, Meier T, Koch SW. Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells. Solid State Communications. 2008;145:61-65. doi:10.1016/j.ssc.2007.09.029
LibreCat
| DOI
2008 | Journal Article | LibreCat-ID: 23482
Pasenow B, Duc HT, Meier T, Koch SW. Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells. Solid State Communications. Published online 2008:61-65. doi:10.1016/j.ssc.2007.09.029
LibreCat
| DOI
1994 | Journal Article | LibreCat-ID: 13854
Schmidt WG, Srivastava G. First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications. 1994;89(4):345-348. doi:10.1016/0038-1098(94)90597-5
LibreCat
| DOI