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7 Publications
2020 | Journal Article | LibreCat-ID: 34090
Riedl, T., & Lindner, J. (2020). Applicability of molecular statics simulation to partial dislocations in GaAs. Solid State Communications, 314–315, Article 113927. https://doi.org/10.1016/j.ssc.2020.113927
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 34089
Riedl, T., & Lindner, J. (2020). Applicability of molecular statics simulation to partial dislocations in GaAs. Solid State Communications, 314–315, Article 113927. https://doi.org/10.1016/j.ssc.2020.113927
LibreCat
| DOI
2013 | Journal Article | LibreCat-ID: 7296
Moody, G., Singh, R., Li, H., Akimov, I. A., Bayer, M., Reuter, D., … Cundiff, S. T. (2013). Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy. Solid State Communications, 163, 65–69. https://doi.org/10.1016/j.ssc.2013.03.025
LibreCat
| DOI
2008 | Journal Article | LibreCat-ID: 40411
Pasenow, B., Duc, H. T., Meier, T., & Koch, S. W. (2008). Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells. Solid State Communications, 145(1–2), 61–65. https://doi.org/10.1016/j.ssc.2007.09.029
LibreCat
| DOI
2008 | Journal Article | LibreCat-ID: 24976
Pasenow, B., Duc, H. T., Meier, T., & Koch, S. W. (2008). Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells. Solid State Communications, 145, 61–65. https://doi.org/10.1016/j.ssc.2007.09.029
LibreCat
| DOI
2008 | Journal Article | LibreCat-ID: 23482
Pasenow, B., Duc, H. T., Meier, T., & Koch, S. W. (2008). Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells. Solid State Communications, 61–65. https://doi.org/10.1016/j.ssc.2007.09.029
LibreCat
| DOI
1994 | Journal Article | LibreCat-ID: 13854
Schmidt, W. G., & Srivastava, G. (1994). First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications, 89(4), 345–348. https://doi.org/10.1016/0038-1098(94)90597-5
LibreCat
| DOI