Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields

J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020).

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Journal Article | Published | English
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Semiconductor Science and Technology
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085011
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Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. 2020. doi:10.1088/1361-6641/ab89e1
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2020). Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/ab89e1
@article{Schuster_Kim_Batke_Reuter_Wieck_2020, title={Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields}, DOI={10.1088/1361-6641/ab89e1}, number={085011}, journal={Semiconductor Science and Technology}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2020} }
Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.” Semiconductor Science and Technology, 2020. https://doi.org/10.1088/1361-6641/ab89e1.
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,” Semiconductor Science and Technology, 2020.
Schuster, J., et al. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.” Semiconductor Science and Technology, 085011, 2020, doi:10.1088/1361-6641/ab89e1.

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