Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology
L. Wu, M. Weizel, C. Scheytt, in: 2020 IEEE International Symposium on Circuits and Systems (ISCAS), IEEE, Sevilla, Spain, 2020.
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Abstract
This paper presents a broadband track-and-hold amplifier (THA) based on switched-emitter-follower (SEF) topology. The THA exhibits both large- and small-signal bandwidth exeeding 60 GHz. It achieves an effective number of bits (ENOB) of 7 bit at 34 GHz input frequency and an ENOB of >5 bit over the whole input frequency bandwidth at sampling rate of 10 GS/s. Much higher sampling rates are possible but lead to somewhat worse performance. The chip was fabricated in a 130 nm SiGe BiCMOS technology from IHP (SG13G2). It draws 78 mA from a -4.8 V supply voltage, dissipating 375 mW.
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2020 IEEE International Symposium on Circuits and Systems (ISCAS)
Conference Date
2020.10.12 – 2020.10.14
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Wu L, Weizel M, Scheytt C. Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology. In: 2020 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE; 2020. doi:10.1109/ISCAS45731.2020.9180947
Wu, L., Weizel, M., & Scheytt, C. (2020). Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology. 2020 IEEE International Symposium on Circuits and Systems (ISCAS). https://doi.org/10.1109/ISCAS45731.2020.9180947
@inproceedings{Wu_Weizel_Scheytt_2020, place={Sevilla, Spain}, title={Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology}, DOI={10.1109/ISCAS45731.2020.9180947}, booktitle={2020 IEEE International Symposium on Circuits and Systems (ISCAS)}, publisher={IEEE}, author={Wu, Liang and Weizel, Maxim and Scheytt, Christoph}, year={2020} }
Wu, Liang, Maxim Weizel, and Christoph Scheytt. “Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 Nm SiGe BiCMOS Technology.” In 2020 IEEE International Symposium on Circuits and Systems (ISCAS). Sevilla, Spain: IEEE, 2020. https://doi.org/10.1109/ISCAS45731.2020.9180947.
L. Wu, M. Weizel, and C. Scheytt, “Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology,” 2020, doi: 10.1109/ISCAS45731.2020.9180947.
Wu, Liang, et al. “Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 Nm SiGe BiCMOS Technology.” 2020 IEEE International Symposium on Circuits and Systems (ISCAS), IEEE, 2020, doi:10.1109/ISCAS45731.2020.9180947.
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