A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology
M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING, Bordeaux, France, 2013.
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Conference Paper
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Author
Elkhouly, Mohamed;
Mao, Yanfei;
Meliani, Chafik;
Ellinger, Frank;
Scheytt, ChristophLibreCat
Abstract
This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm 2 .
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IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,
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Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . In: IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,. ; 2013. doi:10.1109/BCTM.2013.6798158
Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., & Scheytt, C. (2013). A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology . IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,. https://doi.org/10.1109/BCTM.2013.6798158
@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Bordeaux, France,}, title={A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology }, DOI={10.1109/BCTM.2013.6798158}, booktitle={IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013} }
Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology .” In IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING,. Bordeaux, France, 2013. https://doi.org/10.1109/BCTM.2013.6798158.
M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS technology ,” 2013, doi: 10.1109/BCTM.2013.6798158.
Elkhouly, Mohamed, et al. “A 220-245 GHz Switched Beam Butler Matrix in 0,13µm SiGe BiCMOS Technology .” IEEE BIPOLAR / BiCMOS CIRCUITS AND TECHNOLOGY MEETING, 2013, doi:10.1109/BCTM.2013.6798158.
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