A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology

B. Laemmle, K. Schmalz, J. Borngräber, C. Scheytt, R. Weigel, A. Koelpin, D. Kissinger, in: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013.

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A fully integrated six-port receiver front-end at 120 GHz center frequency including a low-noise-amplifier, a passive six-port network, a VCO, and four direct converters is presented in this publication. The overall architecture of the designed six-port receiver is analyzed and fundamental theory of the receiver given. The design of the six-port building blocks is described and measurement results are presented. All circuits have been fabricated in a 0.13μm 300-GHz f T SiGe BiCMOS technology. The fully integrated receiver consumes 85.9 rnA from a 3.3-V supply and occupies an area of 1.03mm 2 . The receiver includes a VCO with a center frequency of 117.15 GHz, a tuning range of 2.7 GHz, and a phase noise of -86 dBc/Hz at 1 MHz offset. The LNA shows a gain of 12 dB, a 3-dB bandwidth of 30 GHz at a power consumption of 9.2 rnA. The six-port core has a conversion gain of 3.6 dB, a P 1dB of -12 dBm, and a power consumption of 28 rnA. The overall receiver shows a conversion gain of 2.4 dB at 120 GHz and P 1dB of -17 dBm.
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Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
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Laemmle B, Schmalz K, Borngräber J, et al. A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology. In: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On. ; 2013. doi:10.1109/SiRF.2013.6489455
Laemmle, B., Schmalz, K., Borngräber, J., Scheytt, C., Weigel, R., Koelpin, A., & Kissinger, D. (2013). A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology. Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On. https://doi.org/10.1109/SiRF.2013.6489455
@inproceedings{Laemmle_Schmalz_Borngräber_Scheytt_Weigel_Koelpin_Kissinger_2013, title={A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology}, DOI={10.1109/SiRF.2013.6489455}, booktitle={Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on}, author={Laemmle, Benjamin and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph and Weigel, Robert and Koelpin, Alexander and Kissinger, Dietmar}, year={2013} }
Laemmle, Benjamin, Klaus Schmalz, Johannes Borngräber, Christoph Scheytt, Robert Weigel, Alexander Koelpin, and Dietmar Kissinger. “A Fully Integrated 120-GHz Six-Port Receiver Front-End in a 130-Nm SiGe BiCMOS Technology.” In Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013. https://doi.org/10.1109/SiRF.2013.6489455.
B. Laemmle et al., “A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology,” 2013, doi: 10.1109/SiRF.2013.6489455.
Laemmle, Benjamin, et al. “A Fully Integrated 120-GHz Six-Port Receiver Front-End in a 130-Nm SiGe BiCMOS Technology.” Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting On, 2013, doi:10.1109/SiRF.2013.6489455.

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