120 GHz Phased-Array Circuits in 0.25 ?m SiGe BiCMOS Technology

M. Elkhouly, S. Glisic, F. Ellinger, C. Scheytt, in: GeMIC 2012, 2012, pp. 1–4.

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Conference Paper | English
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Abstract
This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication.
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GeMIC 2012
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1-4
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Elkhouly M, Glisic S, Ellinger F, Scheytt C. 120 GHz Phased-Array Circuits in 0.25 ?m SiGe BiCMOS Technology. In: GeMIC 2012. ; 2012:1-4.
Elkhouly, M., Glisic, S., Ellinger, F., & Scheytt, C. (2012). 120 GHz Phased-Array Circuits in 0.25 ?m SiGe BiCMOS Technology. GeMIC 2012, 1–4.
@inproceedings{Elkhouly_Glisic_Ellinger_Scheytt_2012, title={120 GHz Phased-Array Circuits in 0.25 ?m SiGe BiCMOS Technology}, booktitle={GeMIC 2012}, author={Elkhouly, Mohamed and Glisic, Srdjan and Ellinger, Frank and Scheytt, Christoph}, year={2012}, pages={1–4} }
Elkhouly, Mohamed, Srdjan Glisic, Frank Ellinger, and Christoph Scheytt. “120 GHz Phased-Array Circuits in 0.25 ?M SiGe BiCMOS Technology.” In GeMIC 2012, 1–4, 2012.
M. Elkhouly, S. Glisic, F. Ellinger, and C. Scheytt, “120 GHz Phased-Array Circuits in 0.25 ?m SiGe BiCMOS Technology,” in GeMIC 2012, 2012, pp. 1–4.
Elkhouly, Mohamed, et al. “120 GHz Phased-Array Circuits in 0.25 ?M SiGe BiCMOS Technology.” GeMIC 2012, 2012, pp. 1–4.

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