Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing
B. Sedighi, P. Ostrovskyy, C. Scheytt, K.S.C. Stille, J. Böcker, in: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3.
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Conference Paper
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Author
Sedighi, Behnam;
Ostrovskyy, Philip;
Scheytt, ChristophLibreCat;
Stille, Karl Stephan Christian;
Böcker, Joachim
Abstract
this paper investigates low-power design of high-speed and high-swing electronic driver circuits. A method to estimate and optimize the power consumption of such driver ICs is presented. A 20-Gb/s driver circuit is fabricated in 0.25 µm SiGe BiCMOS process and an output swing of 2.5 V pp is measured. The driver consumes 0.75 W from 5 V supply.
Publishing Year
Proceedings Title
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Page
1 -3
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Cite this
Sedighi B, Ostrovskyy P, Scheytt C, Stille KSC, Böcker J. Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing. In: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International. ; 2012:1-3. doi:10.1109/MWSYM.2012.6259502
Sedighi, B., Ostrovskyy, P., Scheytt, C., Stille, K. S. C., & Böcker, J. (2012). Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing. Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 1–3. https://doi.org/10.1109/MWSYM.2012.6259502
@inproceedings{Sedighi_Ostrovskyy_Scheytt_Stille_Böcker_2012, title={Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing}, DOI={10.1109/MWSYM.2012.6259502}, booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Sedighi, Behnam and Ostrovskyy, Philip and Scheytt, Christoph and Stille, Karl Stephan Christian and Böcker, Joachim}, year={2012}, pages={1–3} }
Sedighi, Behnam, Philip Ostrovskyy, Christoph Scheytt, Karl Stephan Christian Stille, and Joachim Böcker. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output Swing.” In Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 1–3, 2012. https://doi.org/10.1109/MWSYM.2012.6259502.
B. Sedighi, P. Ostrovskyy, C. Scheytt, K. S. C. Stille, and J. Böcker, “Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing,” in Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3, doi: 10.1109/MWSYM.2012.6259502.
Sedighi, Behnam, et al. “Low-Power 20-Gb/s SiGe BiCMOS Driver with 2.5 V Output Swing.” Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3, doi:10.1109/MWSYM.2012.6259502.
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