A structure definition technique for 25 nm lines of silicon and related materials
U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.
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Journal Article
| Published
| English
Author
Hilleringmann, UlrichLibreCat;
Vieregge, T.;
Horstmann, J.T.
Department
Keywords
Publishing Year
Journal Title
Microelectronic Engineering
Volume
53
Issue
1-4
Page
569-572
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Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering. 2002;53(1-4):569-572. doi:10.1016/s0167-9317(00)00380-4
Hilleringmann, U., Vieregge, T., & Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering, 53(1–4), 569–572. https://doi.org/10.1016/s0167-9317(00)00380-4
@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={10.1016/s0167-9317(00)00380-4}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }
Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” Microelectronic Engineering 53, no. 1–4 (2002): 569–72. https://doi.org/10.1016/s0167-9317(00)00380-4.
U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 569–572, 2002, doi: 10.1016/s0167-9317(00)00380-4.
Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:10.1016/s0167-9317(00)00380-4.
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