On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures

Koop, E. J., Iqbal, M. J., Limbach, F., Boute, M., van Wees, B. J., Reuter, D., … van der Wal, C. H. (2013). On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures. Semiconductor Science and Technology, 28(2). https://doi.org/10.1088/0268-1242/28/2/025006

@article{Koop_Iqbal_Limbach_Boute_van Wees_Reuter_Wieck_Kooi_van der Wal_2013, title={On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures}, volume={28}, DOI={10.1088/0268-1242/28/2/025006}, number={2025006}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Koop, E J and Iqbal, M J and Limbach, F and Boute, M and van Wees, B J and Reuter, Dirk and Wieck, A D and Kooi, B J and van der Wal, C H}, year={2013} }

Koop, E J, M J Iqbal, F Limbach, M Boute, B J van Wees, Dirk Reuter, A D Wieck, B J Kooi, and C H van der Wal. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.” Semiconductor Science and Technology 28, no. 2 (2013). https://doi.org/10.1088/0268-1242/28/2/025006.

E. J. Koop et al., “On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 2, 2013.

Koop, E. J., et al. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.” Semiconductor Science and Technology, vol. 28, no. 2, 025006, IOP Publishing, 2013, doi:10.1088/0268-1242/28/2/025006.