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379 Publications


2019 | Journal Article | LibreCat-ID: 15444 | OA
M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” physica status solidi (b), Art. no. 1900532, 2019, doi: 10.1002/pssb.201900532.
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2018 | Conference Paper | LibreCat-ID: 4413
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars,” presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan), 2018.
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2018 | Conference Paper | LibreCat-ID: 4414
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A ,” presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan), 2018.
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2018 | Journal Article | LibreCat-ID: 7008
E. Evers et al., “Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots,” Physical Review B, vol. 98, no. 7, 2018.
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2018 | Journal Article | LibreCat-ID: 7009
J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures,” Semiconductor Science and Technology, vol. 33, no. 9, 2018.
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2018 | Journal Article | LibreCat-ID: 7010
J. Debus et al., “Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures,” Physics of the Solid State, vol. 60, no. 8, pp. 1611–1617, 2018.
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2018 | Journal Article | LibreCat-ID: 7018
A. Trapp and D. Reuter, “Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, no. 2, 2018.
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2018 | Journal Article | LibreCat-ID: 7019
V. Zolatanosha and D. Reuter, “Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, no. 2, 2018.
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2018 | Journal Article | LibreCat-ID: 7021
E. A. Zhukov et al., “Spin inertia of resident and photoexcited carriers in singly charged quantum dots,” Physical Review B, vol. 98, no. 12, 2018.
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2018 | Journal Article | LibreCat-ID: 7022
S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 5, 2018.
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2018 | Journal Article | LibreCat-ID: 6505
D. S. Smirnov et al., “Theory of spin inertia in singly charged quantum dots,” Physical Review B, vol. 98, no. 12, 2018.
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2018 | Journal Article | LibreCat-ID: 3427
A. Widhalm et al., “Ultrafast electric phase control of a single exciton qubit,” Applied Physics Letters, vol. 112, no. 11, p. 111105, 2018, doi: 10.1063/1.5020364.
LibreCat | Files available | DOI
 

2018 | Journal Article | LibreCat-ID: 20588
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As, “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 3, p. 1600729, 2018, doi: https://doi.org/10.1002/pssb.201600729.
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2017 | Journal Article | LibreCat-ID: 4808
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells,” physica status solidi (b), vol. 255, no. 5, 2017.
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2017 | Journal Article | LibreCat-ID: 4810
T. Wecker et al., “Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures,” Journal of Crystal Growth, vol. 477, pp. 149–153, 2017.
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2017 | Journal Article | LibreCat-ID: 4811
M. Deppe, J. W. Gerlach, D. Reuter, and D. J. As, “Incorporation of germanium for n-type doping of cubic GaN,” physica status solidi (b), vol. 254, no. 8, 2017.
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2017 | Journal Article | LibreCat-ID: 4813
D. J. As, M. Deppe, J. Gerlach, and D. Reuter, “Optical Properties of Germanium Doped Cubic GaN,” MRS Advances, vol. 2, no. 05, pp. 283–288, 2017.
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2017 | Journal Article | LibreCat-ID: 7020
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, and A. D. Wieck, “Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy,” Journal of Crystal Growth, vol. 481, pp. 7–10, 2017.
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2017 | Journal Article | LibreCat-ID: 7026
V. Zolatanosha and D. Reuter, “Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures,” Microelectronic Engineering, vol. 180, pp. 35–39, 2017.
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2017 | Journal Article | LibreCat-ID: 7027
S. Scholz et al., “Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy,” Journal of Crystal Growth, vol. 470, pp. 46–50, 2017.
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