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379 Publications
2019 | Journal Article | LibreCat-ID: 15444 | 
Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. physica status solidi (b). Published online 2019. doi:10.1002/pssb.201900532
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2018 | Conference Paper | LibreCat-ID: 4413
Riedl T, Kunnathully V, Trapp A, Reuter D, Lindner J. Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars. In: ; 2018.
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2018 | Conference Paper | LibreCat-ID: 4414
Riedl T, Kunnathully V, Trapp A, Reuter D, Lindner J. MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A . In: ; 2018.
LibreCat
2018 | Journal Article | LibreCat-ID: 7008
Evers E, Belykh VV, Kopteva NE, et al. Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots. Physical Review B. 2018;98(7). doi:10.1103/physrevb.98.075309
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2018 | Journal Article | LibreCat-ID: 7009
Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology. 2018;33(9). doi:10.1088/1361-6641/aad83d
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2018 | Journal Article | LibreCat-ID: 7010
Debus J, Kudlacik D, Sapega VF, et al. Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures. Physics of the Solid State. 2018;60(8):1611-1617. doi:10.1134/s1063783418080036
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2018 | Journal Article | LibreCat-ID: 7018
Trapp A, Reuter D. Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 2018;36(2). doi:10.1116/1.5012957
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2018 | Journal Article | LibreCat-ID: 7019
Zolatanosha V, Reuter D. Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 2018;36(2). doi:10.1116/1.5013650
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2018 | Journal Article | LibreCat-ID: 7021
Zhukov EA, Kirstein E, Smirnov DS, et al. Spin inertia of resident and photoexcited carriers in singly charged quantum dots. Physical Review B. 2018;98(12). doi:10.1103/physrevb.98.121304
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2018 | Journal Article | LibreCat-ID: 7022
Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(5). doi:10.1002/pssb.201700457
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2018 | Journal Article | LibreCat-ID: 6505
Smirnov DS, Zhukov EA, Kirstein E, et al. Theory of spin inertia in singly charged quantum dots. Physical Review B. 2018;98(12). doi:10.1103/physrevb.98.125306
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2018 | Journal Article | LibreCat-ID: 3427
Widhalm A, Mukherjee A, Krehs S, et al. Ultrafast electric phase control of a single exciton qubit. Applied Physics Letters. 2018;112(11):111105. doi:10.1063/1.5020364
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2018 | Journal Article | LibreCat-ID: 20588
Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(3):1600729. doi:https://doi.org/10.1002/pssb.201600729
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2017 | Journal Article | LibreCat-ID: 4808
Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. physica status solidi (b). 2017;255(5). doi:10.1002/pssb.201700373
LibreCat
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2017 | Journal Article | LibreCat-ID: 4810
Wecker T, Jostmeier T, Rieger T, et al. Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth. 2017;477:149-153. doi:10.1016/j.jcrysgro.2017.01.022
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2017 | Journal Article | LibreCat-ID: 4811
Deppe M, Gerlach JW, Reuter D, As DJ. Incorporation of germanium for n-type doping of cubic GaN. physica status solidi (b). 2017;254(8). doi:10.1002/pssb.201600700
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2017 | Journal Article | LibreCat-ID: 4813
As DJ, Deppe M, Gerlach J, Reuter D. Optical Properties of Germanium Doped Cubic GaN. MRS Advances. 2017;2(05):283-288. doi:10.1557/adv.2016.637
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| DOI
2017 | Journal Article | LibreCat-ID: 7020
Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD. Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth. 2017;481:7-10. doi:10.1016/j.jcrysgro.2017.10.029
LibreCat
| DOI
2017 | Journal Article | LibreCat-ID: 7026
Zolatanosha V, Reuter D. Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. Microelectronic Engineering. 2017;180:35-39. doi:10.1016/j.mee.2017.05.053
LibreCat
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2017 | Journal Article | LibreCat-ID: 7027
Scholz S, Schott R, Labud PA, et al. Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy. Journal of Crystal Growth. 2017;470:46-50. doi:10.1016/j.jcrysgro.2017.04.013
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