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379 Publications
2019 | Journal Article | LibreCat-ID: 15444 | 
Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2019). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. Physica Status Solidi (b), Article 1900532. https://doi.org/10.1002/pssb.201900532
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2018 | Conference Paper | LibreCat-ID: 4413
Riedl, T., Kunnathully, V., Trapp, A., Reuter, D., & Lindner, J. (2018). Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars. Presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan).
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2018 | Conference Paper | LibreCat-ID: 4414
Riedl, T., Kunnathully, V., Trapp, A., Reuter, D., & Lindner, J. (2018). MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A . Presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan).
LibreCat
2018 | Journal Article | LibreCat-ID: 7008
Evers, E., Belykh, V. V., Kopteva, N. E., Yugova, I. A., Greilich, A., Yakovlev, D. R., … Bayer, M. (2018). Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots. Physical Review B, 98(7). https://doi.org/10.1103/physrevb.98.075309
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2018 | Journal Article | LibreCat-ID: 7009
Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2018). Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology, 33(9). https://doi.org/10.1088/1361-6641/aad83d
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2018 | Journal Article | LibreCat-ID: 7010
Debus, J., Kudlacik, D., Sapega, V. F., Shamirzaev, T. S., Yakovlev, D. R., Reuter, D., … Bayer, M. (2018). Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures. Physics of the Solid State, 60(8), 1611–1617. https://doi.org/10.1134/s1063783418080036
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2018 | Journal Article | LibreCat-ID: 7018
Trapp, A., & Reuter, D. (2018). Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 36(2). https://doi.org/10.1116/1.5012957
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2018 | Journal Article | LibreCat-ID: 7019
Zolatanosha, V., & Reuter, D. (2018). Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 36(2). https://doi.org/10.1116/1.5013650
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2018 | Journal Article | LibreCat-ID: 7021
Zhukov, E. A., Kirstein, E., Smirnov, D. S., Yakovlev, D. R., Glazov, M. M., Reuter, D., … Greilich, A. (2018). Spin inertia of resident and photoexcited carriers in singly charged quantum dots. Physical Review B, 98(12). https://doi.org/10.1103/physrevb.98.121304
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2018 | Journal Article | LibreCat-ID: 7022
Blumenthal, S., Reuter, D., & As, D. J. (2018). Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (B), 255(5). https://doi.org/10.1002/pssb.201700457
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2018 | Journal Article | LibreCat-ID: 6505
Smirnov, D. S., Zhukov, E. A., Kirstein, E., Yakovlev, D. R., Reuter, D., Wieck, A. D., … Glazov, M. M. (2018). Theory of spin inertia in singly charged quantum dots. Physical Review B, 98(12). https://doi.org/10.1103/physrevb.98.125306
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2018 | Journal Article | LibreCat-ID: 3427
Widhalm, A., Mukherjee, A., Krehs, S., Sharma, N., Kölling, P., Thiede, A., Reuter, D., Förstner, J., & Zrenner, A. (2018). Ultrafast electric phase control of a single exciton qubit. Applied Physics Letters, 112(11), 111105. https://doi.org/10.1063/1.5020364
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2018 | Journal Article | LibreCat-ID: 20588
Blumenthal, S., Rieger, T., Meertens, D., Pawlis, A., Reuter, D., & As, D. J. (2018). Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (b), 255(3), 1600729. https://doi.org/10.1002/pssb.201600729
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2017 | Journal Article | LibreCat-ID: 4808
Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., & As, D. J. (2017). Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. Physica Status Solidi (B), 255(5). https://doi.org/10.1002/pssb.201700373
LibreCat
| DOI
2017 | Journal Article | LibreCat-ID: 4810
Wecker, T., Jostmeier, T., Rieger, T., Neumann, E., Pawlis, A., Betz, M., … As, D. J. (2017). Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth, 477, 149–153. https://doi.org/10.1016/j.jcrysgro.2017.01.022
LibreCat
| DOI
2017 | Journal Article | LibreCat-ID: 4811
Deppe, M., Gerlach, J. W., Reuter, D., & As, D. J. (2017). Incorporation of germanium for n-type doping of cubic GaN. Physica Status Solidi (B), 254(8). https://doi.org/10.1002/pssb.201600700
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2017 | Journal Article | LibreCat-ID: 4813
As, D. J., Deppe, M., Gerlach, J., & Reuter, D. (2017). Optical Properties of Germanium Doped Cubic GaN. MRS Advances, 2(05), 283–288. https://doi.org/10.1557/adv.2016.637
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| DOI
2017 | Journal Article | LibreCat-ID: 7020
Ritzmann, J., Schott, R., Gross, K., Reuter, D., Ludwig, A., & Wieck, A. D. (2017). Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth, 481, 7–10. https://doi.org/10.1016/j.jcrysgro.2017.10.029
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2017 | Journal Article | LibreCat-ID: 7026
Zolatanosha, V., & Reuter, D. (2017). Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. Microelectronic Engineering, 180, 35–39. https://doi.org/10.1016/j.mee.2017.05.053
LibreCat
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2017 | Journal Article | LibreCat-ID: 7027
Scholz, S., Schott, R., Labud, P. A., Somsen, C., Reuter, D., Ludwig, A., & Wieck, A. D. (2017). Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy. Journal of Crystal Growth, 470, 46–50. https://doi.org/10.1016/j.jcrysgro.2017.04.013
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