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379 Publications
2019 | Journal Article | LibreCat-ID: 15444 | 
Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N.” Physica Status Solidi (b), 1900532, 2019, doi:10.1002/pssb.201900532.
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2018 | Conference Paper | LibreCat-ID: 4413
Riedl, Thomas, et al. Strain Relaxation in InAs Nanoislands on Top of GaAs (111) A Nanopillars. 2018.
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2018 | Conference Paper | LibreCat-ID: 4414
Riedl, Thomas, et al. MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A . 2018.
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2018 | Journal Article | LibreCat-ID: 7008
Evers, E., et al. “Decay and Revival of Electron Spin Polarization in an Ensemble of (In,Ga)As Quantum Dots.” Physical Review B, vol. 98, no. 7, American Physical Society (APS), 2018, doi:10.1103/physrevb.98.075309.
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2018 | Journal Article | LibreCat-ID: 7009
Schuster, J., et al. “Interlayer Charge Transfer in N-Modulation Doped Al1−x Ga x As–GaAs Single Heterostructures.” Semiconductor Science and Technology, vol. 33, no. 9, 095020, IOP Publishing, 2018, doi:10.1088/1361-6641/aad83d.
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2018 | Journal Article | LibreCat-ID: 7010
Debus, J., et al. “Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures.” Physics of the Solid State, vol. 60, no. 8, Pleiades Publishing Ltd, 2018, pp. 1611–17, doi:10.1134/s1063783418080036.
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2018 | Journal Article | LibreCat-ID: 7018
Trapp, Alexander, and Dirk Reuter. “Formation of Self-Assembled GaAs Quantum Dots via Droplet Epitaxy on Misoriented GaAs(111)B Substrates.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, no. 2, 02D106, American Vacuum Society, 2018, doi:10.1116/1.5012957.
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2018 | Journal Article | LibreCat-ID: 7019
Zolatanosha, Viktoryia, and Dirk Reuter. “Site-Controlled Droplet Epitaxy of GaAs Quantum Dots by Deposition through Shadow Masks.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, no. 2, 02D105, American Vacuum Society, 2018, doi:10.1116/1.5013650.
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2018 | Journal Article | LibreCat-ID: 7021
Zhukov, E. A., et al. “Spin Inertia of Resident and Photoexcited Carriers in Singly Charged Quantum Dots.” Physical Review B, vol. 98, no. 12, American Physical Society (APS), 2018, doi:10.1103/physrevb.98.121304.
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2018 | Journal Article | LibreCat-ID: 7022
Blumenthal, Sarah, et al. “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status Solidi (B), vol. 255, no. 5, 1700457, Wiley, 2018, doi:10.1002/pssb.201700457.
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2018 | Journal Article | LibreCat-ID: 6505
Smirnov, D. S., et al. “Theory of Spin Inertia in Singly Charged Quantum Dots.” Physical Review B, vol. 98, no. 12, American Physical Society (APS), 2018, doi:10.1103/physrevb.98.125306.
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2018 | Journal Article | LibreCat-ID: 3427
Widhalm, Alex, et al. “Ultrafast Electric Phase Control of a Single Exciton Qubit.” Applied Physics Letters, vol. 112, no. 11, 2018, p. 111105, doi:10.1063/1.5020364.
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2018 | Journal Article | LibreCat-ID: 20588
Blumenthal, Sarah, et al. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status Solidi (b), vol. 255, no. 3, 2018, p. 1600729, doi:https://doi.org/10.1002/pssb.201600729.
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2017 | Journal Article | LibreCat-ID: 4808
Wecker, Tobias, et al. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status Solidi (B), vol. 255, no. 5, 1700373, Wiley, 2017, doi:10.1002/pssb.201700373.
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2017 | Journal Article | LibreCat-ID: 4810
Wecker, T., et al. “Linear and Nonlinear Behaviour of Near-IR Intersubband Transitions of Cubic GaN/AlN Multi Quantum Well Structures.” Journal of Crystal Growth, vol. 477, Elsevier BV, 2017, pp. 149–53, doi:10.1016/j.jcrysgro.2017.01.022.
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| DOI
2017 | Journal Article | LibreCat-ID: 4811
Deppe, Michael, et al. “Incorporation of Germanium for N-Type Doping of Cubic GaN.” Physica Status Solidi (B), vol. 254, no. 8, 1600700, Wiley, 2017, doi:10.1002/pssb.201600700.
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| DOI
2017 | Journal Article | LibreCat-ID: 4813
As, Donat Josef, et al. “Optical Properties of Germanium Doped Cubic GaN.” MRS Advances, vol. 2, no. 05, Cambridge University Press (CUP), 2017, pp. 283–88, doi:10.1557/adv.2016.637.
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| DOI
2017 | Journal Article | LibreCat-ID: 7020
Ritzmann, Julian, et al. “Overcoming Ehrlich-Schwöbel Barrier in (1 1 1)A GaAs Molecular Beam Epitaxy.” Journal of Crystal Growth, vol. 481, Elsevier BV, 2017, pp. 7–10, doi:10.1016/j.jcrysgro.2017.10.029.
LibreCat
| DOI
2017 | Journal Article | LibreCat-ID: 7026
Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” Microelectronic Engineering, vol. 180, Elsevier BV, 2017, pp. 35–39, doi:10.1016/j.mee.2017.05.053.
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| DOI
2017 | Journal Article | LibreCat-ID: 7027
Scholz, Sven, et al. “Focused Ion Beam Supported Growth of Monocrystalline Wurtzite InAs Nanowires Grown by Molecular Beam Epitaxy.” Journal of Crystal Growth, vol. 470, Elsevier BV, 2017, pp. 46–50, doi:10.1016/j.jcrysgro.2017.04.013.
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