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379 Publications
2019 | Journal Article | LibreCat-ID: 15444 | 
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).
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M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).
2018 | Conference Paper | LibreCat-ID: 4413
Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.
LibreCat
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.
2018 | Conference Paper | LibreCat-ID: 4414
MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.
LibreCat
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.
2018 | Journal Article | LibreCat-ID: 7008
Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots
E. Evers, V.V. Belykh, N.E. Kopteva, I.A. Yugova, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 98 (2018).
LibreCat
| DOI
E. Evers, V.V. Belykh, N.E. Kopteva, I.A. Yugova, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 98 (2018).
2018 | Journal Article | LibreCat-ID: 7009
Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
LibreCat
| DOI
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
2018 | Journal Article | LibreCat-ID: 7010
Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures
J. Debus, D. Kudlacik, V.F. Sapega, T.S. Shamirzaev, D.R. Yakovlev, D. Reuter, A.D. Wieck, A. Waag, M. Bayer, Physics of the Solid State 60 (2018) 1611–1617.
LibreCat
| DOI
J. Debus, D. Kudlacik, V.F. Sapega, T.S. Shamirzaev, D.R. Yakovlev, D. Reuter, A.D. Wieck, A. Waag, M. Bayer, Physics of the Solid State 60 (2018) 1611–1617.
2018 | Journal Article | LibreCat-ID: 7018
Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates
A. Trapp, D. Reuter, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).
LibreCat
| DOI
A. Trapp, D. Reuter, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).
2018 | Journal Article | LibreCat-ID: 7019
Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks
V. Zolatanosha, D. Reuter, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).
LibreCat
| DOI
V. Zolatanosha, D. Reuter, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).
2018 | Journal Article | LibreCat-ID: 7021
Spin inertia of resident and photoexcited carriers in singly charged quantum dots
E.A. Zhukov, E. Kirstein, D.S. Smirnov, D.R. Yakovlev, M.M. Glazov, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Physical Review B 98 (2018).
LibreCat
| DOI
E.A. Zhukov, E. Kirstein, D.S. Smirnov, D.R. Yakovlev, M.M. Glazov, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Physical Review B 98 (2018).
2018 | Journal Article | LibreCat-ID: 7022
Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).
LibreCat
| DOI
S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).
2018 | Journal Article | LibreCat-ID: 6505
Theory of spin inertia in singly charged quantum dots
D.S. Smirnov, E.A. Zhukov, E. Kirstein, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, M.M. Glazov, Physical Review B 98 (2018).
LibreCat
| DOI
D.S. Smirnov, E.A. Zhukov, E. Kirstein, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, M.M. Glazov, Physical Review B 98 (2018).
2018 | Journal Article | LibreCat-ID: 20588
Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.
LibreCat
| DOI
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.
2018 | Journal Article | LibreCat-ID: 3427
Ultrafast electric phase control of a single exciton qubit
A. Widhalm, A. Mukherjee, S. Krehs, N. Sharma, P. Kölling, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 112 (2018) 111105.
LibreCat
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| DOI
A. Widhalm, A. Mukherjee, S. Krehs, N. Sharma, P. Kölling, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 112 (2018) 111105.
2017 | Journal Article | LibreCat-ID: 4808
Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).
LibreCat
| DOI
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).
2017 | Journal Article | LibreCat-ID: 4810
Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures
T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth 477 (2017) 149–153.
LibreCat
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T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth 477 (2017) 149–153.
2017 | Journal Article | LibreCat-ID: 4811
Incorporation of germanium for n-type doping of cubic GaN
M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254 (2017).
LibreCat
| DOI
M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254 (2017).
2017 | Journal Article | LibreCat-ID: 4813
Optical Properties of Germanium Doped Cubic GaN
D.J. As, M. Deppe, J. Gerlach, D. Reuter, MRS Advances 2 (2017) 283–288.
LibreCat
| DOI
D.J. As, M. Deppe, J. Gerlach, D. Reuter, MRS Advances 2 (2017) 283–288.
2017 | Journal Article | LibreCat-ID: 7020
Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 481 (2017) 7–10.
LibreCat
| DOI
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 481 (2017) 7–10.
2017 | Journal Article | LibreCat-ID: 7026
Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures
V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.
LibreCat
| DOI
V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.
2017 | Journal Article | LibreCat-ID: 7027
Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy
S. Scholz, R. Schott, P.A. Labud, C. Somsen, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 470 (2017) 46–50.
LibreCat
| DOI
S. Scholz, R. Schott, P.A. Labud, C. Somsen, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 470 (2017) 46–50.