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383 Publications
2018 | Journal Article | LibreCat-ID: 7018
Trapp A, Reuter D. Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 2018;36(2). doi:10.1116/1.5012957
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2018 | Journal Article | LibreCat-ID: 7019
Zolatanosha V, Reuter D. Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 2018;36(2). doi:10.1116/1.5013650
LibreCat
| DOI
2018 | Journal Article | LibreCat-ID: 7021
Zhukov EA, Kirstein E, Smirnov DS, et al. Spin inertia of resident and photoexcited carriers in singly charged quantum dots. Physical Review B. 2018;98(12). doi:10.1103/physrevb.98.121304
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2018 | Journal Article | LibreCat-ID: 7022
Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(5). doi:10.1002/pssb.201700457
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2018 | Journal Article | LibreCat-ID: 6505
Smirnov DS, Zhukov EA, Kirstein E, et al. Theory of spin inertia in singly charged quantum dots. Physical Review B. 2018;98(12). doi:10.1103/physrevb.98.125306
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2018 | Journal Article | LibreCat-ID: 20588
Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(3):1600729. doi:https://doi.org/10.1002/pssb.201600729
LibreCat
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2018 | Journal Article | LibreCat-ID: 3427
Widhalm A, Mukherjee A, Krehs S, et al. Ultrafast electric phase control of a single exciton qubit. Applied Physics Letters. 2018;112(11):111105. doi:10.1063/1.5020364
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2017 | Journal Article | LibreCat-ID: 4808
Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. physica status solidi (b). 2017;255(5). doi:10.1002/pssb.201700373
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2017 | Journal Article | LibreCat-ID: 4810
Wecker T, Jostmeier T, Rieger T, et al. Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth. 2017;477:149-153. doi:10.1016/j.jcrysgro.2017.01.022
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2017 | Journal Article | LibreCat-ID: 4811
Deppe M, Gerlach JW, Reuter D, As DJ. Incorporation of germanium for n-type doping of cubic GaN. physica status solidi (b). 2017;254(8). doi:10.1002/pssb.201600700
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2017 | Journal Article | LibreCat-ID: 4813
As DJ, Deppe M, Gerlach J, Reuter D. Optical Properties of Germanium Doped Cubic GaN. MRS Advances. 2017;2(05):283-288. doi:10.1557/adv.2016.637
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2017 | Journal Article | LibreCat-ID: 7020
Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD. Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. Journal of Crystal Growth. 2017;481:7-10. doi:10.1016/j.jcrysgro.2017.10.029
LibreCat
| DOI
2017 | Journal Article | LibreCat-ID: 7026
Zolatanosha V, Reuter D. Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. Microelectronic Engineering. 2017;180:35-39. doi:10.1016/j.mee.2017.05.053
LibreCat
| DOI
2017 | Journal Article | LibreCat-ID: 7027
Scholz S, Schott R, Labud PA, et al. Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy. Journal of Crystal Growth. 2017;470:46-50. doi:10.1016/j.jcrysgro.2017.04.013
LibreCat
| DOI
2017 | Journal Article | LibreCat-ID: 7028
Kuznetsova MS, Cherbunin RV, Gerlovin IY, et al. Spin dynamics of quadrupole nuclei in InGaAs quantum dots. Physical Review B. 2017;95(15). doi:10.1103/physrevb.95.155312
LibreCat
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2017 | Journal Article | LibreCat-ID: 7029
Srinivasan A, Miserev DS, Hudson KL, et al. Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact. Physical Review Letters. 2017;118(14). doi:10.1103/physrevlett.118.146801
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| DOI
2017 | Conference Paper | LibreCat-ID: 3955
Kunnathully V, Riedl T, Karlisch A, Reuter D, Lindner J. InAs heteroepitaxy on GaAs patterned by nanosphere lithography. In: ; 2017.
LibreCat
2017 | Conference Paper | LibreCat-ID: 3987
Riedl T, Kunnathully V, Karlisch A, Reuter D, Lindner J. Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography. In: ; 2017.
LibreCat
2017 | Conference Paper | LibreCat-ID: 3988
Riedl T, Kunnathully V, Karlisch A, et al. Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs. 2017.
LibreCat
2016 | Journal Article | LibreCat-ID: 3841 | 
Quiring W, Jonas B, Förstner J, et al. Phase sensitive properties and coherent manipulation of a photonic crystal microcavity. Optics Express. 2016;24(18):20672-20684. doi:10.1364/oe.24.020672
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