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19 Publications
2013 | Journal Article | LibreCat-ID: 3959
Bürger M, Kemper RM, Bader CA, et al. Cubic GaN quantum dots embedded in zinc-blende AlN microdisks. Journal of Crystal Growth. 2013;378:287-290. doi:10.1016/j.jcrysgro.2012.12.058
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2012 | Journal Article | LibreCat-ID: 4104
Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth. 2012;378:291-294. doi:10.1016/j.jcrysgro.2012.10.011
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2010 | Journal Article | LibreCat-ID: 7705
Trunov K, Reuter D, Ludwig A, et al. (100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires. Journal of Crystal Growth. 2010;323(1):48-51. doi:10.1016/j.jcrysgro.2010.11.060
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2010 | Journal Article | LibreCat-ID: 4144
Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth. 2010;323(1):84-87. doi:10.1016/j.jcrysgro.2010.12.042
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2010 | Journal Article | LibreCat-ID: 4214
Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth. 2010;312(23):3536-3543. doi:10.1016/j.jcrysgro.2010.08.041
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2010 | Journal Article | LibreCat-ID: 13830
Rauls E, Wiebe J, Schmidt WG. Understanding the cubic AlN growth plane from first principles. Journal of Crystal Growth. 2010;312:2892-2895. doi:10.1016/j.jcrysgro.2010.07.027
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2009 | Journal Article | LibreCat-ID: 4192
Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048
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2006 | Journal Article | LibreCat-ID: 7646
Regolin I, Sudfeld D, Lüttjohann S, et al. Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs. Journal of Crystal Growth. 2006;298:607-611. doi:10.1016/j.jcrysgro.2006.10.122
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2006 | Journal Article | LibreCat-ID: 8664
Yang JL, Reuter D, Wieck AD. Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth. 2006:278-284. doi:10.1016/j.jcrysgro.2006.05.051
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