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1205 Publications
2010 | Journal Article | LibreCat-ID: 4154
Hehenkamp B, Possajennikov A, Guse T. On the equivalence of Nash and evolutionary equilibrium in finite populations. Journal of Economic Behavior & Organization. 2010;73(2):254-258. doi:10.1016/j.jebo.2009.08.011
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| DOI
2010 | Journal Article | LibreCat-ID: 4155
Angerhausen J, Bayer C, Hehenkamp B. Strategic Unemployment. Journal of Institutional and Theoretical Economics (JITE). 2010;166(3):439-461.
LibreCat
2010 | Journal Article | LibreCat-ID: 4174 | 
Grodecka-Grad A, Förstner J. Theory of phonon-mediated relaxation in doped quantum dot molecules. Physical Review B. 2010;81(11). doi:10.1103/physrevb.81.115305
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2010 | Journal Article | LibreCat-ID: 4194
Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters. 2010;96(25). doi:10.1063/1.3455066
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2010 | Journal Article | LibreCat-ID: 4200
Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. Physical Review B. 2010;82(5). doi:10.1103/physrevb.82.054517
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2010 | Journal Article | LibreCat-ID: 4202
Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2). doi:10.1063/1.3284944
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2010 | Journal Article | LibreCat-ID: 4204
Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B. 2010;82(9). doi:10.1103/physrevb.82.094110
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2010 | Conference Abstract | LibreCat-ID: 4206
Lindner J. Advanced topics and applications of Transmission Electron Microscopy, Part I-II. In: ; 2010.
LibreCat
2010 | Book (Editor) | LibreCat-ID: 4207
Ila D, Kishimoto N, Lindner J, Baglin J, eds. Ion Beams and Nano-Engineering. Vol 1181. MRS Symposium Proceedings ; 2010.
LibreCat
2010 | Journal Article | LibreCat-ID: 4208
Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. Journal of Physics: Conference Series. 2010;209. doi:10.1088/1742-6596/209/1/012017
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