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1197 Publications
2010 | Journal Article | LibreCat-ID: 4154
Hehenkamp, Burkhard, et al. “On the Equivalence of Nash and Evolutionary Equilibrium in Finite Populations.” Journal of Economic Behavior & Organization, vol. 73, no. 2, Elsevier BV, 2010, pp. 254–58, doi:10.1016/j.jebo.2009.08.011.
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| DOI
2010 | Journal Article | LibreCat-ID: 4155
Angerhausen, Julia, et al. “Strategic Unemployment.” Journal of Institutional and Theoretical Economics (JITE), vol. 166, no. 3, Mohr Siebeck, 2010, pp. 439–61.
LibreCat
2010 | Journal Article | LibreCat-ID: 4174 | 
Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” Physical Review B, vol. 81, no. 11, 115305, American Physical Society (APS), 2010, doi:10.1103/physrevb.81.115305.
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2010 | Journal Article | LibreCat-ID: 4194
Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.
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2010 | Journal Article | LibreCat-ID: 4200
Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” Physical Review B, vol. 82, no. 5, 054517, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.054517.
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2010 | Journal Article | LibreCat-ID: 4202
Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” Journal of Applied Physics, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:10.1063/1.3284944.
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2010 | Journal Article | LibreCat-ID: 4204
Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” Physical Review B, vol. 82, no. 9, 094110, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.094110.
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2010 | Conference Abstract | LibreCat-ID: 4206
Lindner, Jörg. Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II. 2010.
LibreCat
2010 | Book (Editor) | LibreCat-ID: 4207
Ila, D., et al., editors. Ion Beams and Nano-Engineering. Vol. 1181, MRS Symposium Proceedings , 2010.
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2010 | Journal Article | LibreCat-ID: 4208
Häberlen, M., et al. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” Journal of Physics: Conference Series, vol. 209, 012017, IOP Publishing, 2010, doi:10.1088/1742-6596/209/1/012017.
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