From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires
H. Ghasemzadeh Mohammadi, P.-E. Gaillardon, G. De Micheli, IEEE Transactions on Nanotechnology 14 (2015) 1117–1126.
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Journal Article
| English
Author
Ghasemzadeh Mohammadi, HassanLibreCat;
Gaillardon, Pierre-Emmanuel;
De Micheli, Giovanni
Department
Publishing Year
Journal Title
IEEE Transactions on Nanotechnology
Volume
14
Issue
6
Page
1117-1126
LibreCat-ID
Cite this
Ghasemzadeh Mohammadi H, Gaillardon P-E, De Micheli G. From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires. IEEE Transactions on Nanotechnology. 2015;14(6):1117-1126. doi:10.1109/TNANO.2015.2482359
Ghasemzadeh Mohammadi, H., Gaillardon, P.-E., & De Micheli, G. (2015). From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires. IEEE Transactions on Nanotechnology, 14(6), 1117–1126. https://doi.org/10.1109/TNANO.2015.2482359
@article{Ghasemzadeh Mohammadi_Gaillardon_De Micheli_2015, title={From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires}, volume={14}, DOI={10.1109/TNANO.2015.2482359}, number={6}, journal={IEEE Transactions on Nanotechnology}, publisher={IEEE}, author={Ghasemzadeh Mohammadi, Hassan and Gaillardon, Pierre-Emmanuel and De Micheli, Giovanni}, year={2015}, pages={1117–1126} }
Ghasemzadeh Mohammadi, Hassan, Pierre-Emmanuel Gaillardon, and Giovanni De Micheli. “From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires.” IEEE Transactions on Nanotechnology 14, no. 6 (2015): 1117–26. https://doi.org/10.1109/TNANO.2015.2482359.
H. Ghasemzadeh Mohammadi, P.-E. Gaillardon, and G. De Micheli, “From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires,” IEEE Transactions on Nanotechnology, vol. 14, no. 6, pp. 1117–1126, 2015.
Ghasemzadeh Mohammadi, Hassan, et al. “From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires.” IEEE Transactions on Nanotechnology, vol. 14, no. 6, IEEE, 2015, pp. 1117–26, doi:10.1109/TNANO.2015.2482359.
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