A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology
M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, C. Scheytt, in: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seattle, Washington, 2013.
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Conference Paper
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Author
Elkhouly, Mohamed;
Mao, Yanfei;
Meliani, Chafik;
Ellinger, Frank;
Scheytt, ChristophLibreCat
Abstract
A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology with f T /f max of 300/500 GHz is presented. The receiver consists of a four stage LNA, an active power divider, an LO IQ generation network, and direct down-conversion fundamental mixers. The integrated IQ receiver yields a conversion gain of 18 dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245 GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5 V supply and 20 mA from 2 V.
Publishing Year
Proceedings Title
2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,
Conference Date
2013.06.02 – 2013.06.04
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Elkhouly M, Mao Y, Meliani C, Ellinger F, Scheytt C. A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. In: 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,. ; 2013. doi:10.1109/RFIC.2013.6569589
Elkhouly, M., Mao, Y., Meliani, C., Ellinger, F., & Scheytt, C. (2013). A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology. 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,. https://doi.org/10.1109/RFIC.2013.6569589
@inproceedings{Elkhouly_Mao_Meliani_Ellinger_Scheytt_2013, place={Seattle, Washington}, title={A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology}, DOI={10.1109/RFIC.2013.6569589}, booktitle={2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,}, author={Elkhouly, Mohamed and Mao, Yanfei and Meliani, Chafik and Ellinger, Frank and Scheytt, Christoph}, year={2013} }
Elkhouly, Mohamed, Yanfei Mao, Chafik Meliani, Frank Ellinger, and Christoph Scheytt. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.” In 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,. Seattle, Washington, 2013. https://doi.org/10.1109/RFIC.2013.6569589.
M. Elkhouly, Y. Mao, C. Meliani, F. Ellinger, and C. Scheytt, “A 240 GHz Direct Conversion IQ Receiver in 0.13 µm SiGe BiCMOS technology,” 2013, doi: 10.1109/RFIC.2013.6569589.
Elkhouly, Mohamed, et al. “A 240 GHz Direct Conversion IQ Receiver in 0.13 Μm SiGe BiCMOS Technology.” 2013 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2013, doi:10.1109/RFIC.2013.6569589.
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