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379 Publications
2020 | Journal Article | LibreCat-ID: 23841
Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 17995
Riha C, Buchholz SS, Chiatti O, Wieck AD, Reuter D, Fischer SF. Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings. Applied Physics Letters. 2020. doi:10.1063/5.0002247
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 21796
Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. 2020. doi:10.1088/1361-6641/ab89e1
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 21797
Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner JKN. Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials. 2020. doi:10.1103/physrevmaterials.4.014602
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 34093
Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner J. Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials. 2020;4(1). doi:10.1103/physrevmaterials.4.014602
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 34091
Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner J. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020;537. doi:10.1016/j.jcrysgro.2020.125597
LibreCat
| DOI
2020 | Journal Article | LibreCat-ID: 17322
Mukherjee A, Widhalm A, Siebert D, et al. Electrically controlled rapid adiabatic passage in a single quantum dot. Applied Physics Letters. 2020;116:251103. doi:10.1063/5.0012257
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| DOI
2020 | Conference Abstract | LibreCat-ID: 39966
Förstner J, Widhalm A, Mukherjee A, et al. Ultrafast electric control of a single QD exciton. In: 11th International Conference on Quantum Dots. ; 2020.
LibreCat
2019 | Journal Article | LibreCat-ID: 7800
Henksmeier T, Shvarkov S, Trapp A, Reuter D. Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B. Journal of Crystal Growth. 2019;512:164-168. doi:10.1016/j.jcrysgro.2019.02.006
LibreCat
| DOI
2019 | Journal Article | LibreCat-ID: 8646
Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. 2019. doi:10.1063/1.5066095
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| DOI
2019 | Journal Article | LibreCat-ID: 15444 | 
Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N. physica status solidi (b). Published online 2019. doi:10.1002/pssb.201900532
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2018 | Conference Paper | LibreCat-ID: 4413
Riedl T, Kunnathully V, Trapp A, Reuter D, Lindner J. Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars. In: ; 2018.
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2018 | Conference Paper | LibreCat-ID: 4414
Riedl T, Kunnathully V, Trapp A, Reuter D, Lindner J. MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A . In: ; 2018.
LibreCat
2018 | Journal Article | LibreCat-ID: 7008
Evers E, Belykh VV, Kopteva NE, et al. Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots. Physical Review B. 2018;98(7). doi:10.1103/physrevb.98.075309
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| DOI
2018 | Journal Article | LibreCat-ID: 7009
Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology. 2018;33(9). doi:10.1088/1361-6641/aad83d
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| DOI
2018 | Journal Article | LibreCat-ID: 7010
Debus J, Kudlacik D, Sapega VF, et al. Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures. Physics of the Solid State. 2018;60(8):1611-1617. doi:10.1134/s1063783418080036
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| DOI
2018 | Journal Article | LibreCat-ID: 7018
Trapp A, Reuter D. Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 2018;36(2). doi:10.1116/1.5012957
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| DOI
2018 | Journal Article | LibreCat-ID: 7019
Zolatanosha V, Reuter D. Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 2018;36(2). doi:10.1116/1.5013650
LibreCat
| DOI
2018 | Journal Article | LibreCat-ID: 7021
Zhukov EA, Kirstein E, Smirnov DS, et al. Spin inertia of resident and photoexcited carriers in singly charged quantum dots. Physical Review B. 2018;98(12). doi:10.1103/physrevb.98.121304
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| DOI
2018 | Journal Article | LibreCat-ID: 7022
Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(5). doi:10.1002/pssb.201700457
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